Silicon carbide powder and preparation method thereof

A technology of silicon carbide powder and silicon micropowder, which is applied in the field of silicon carbide powder and its preparation, can solve the problems of uneven particle size distribution of powder, restrictions on the industrialization of silicon carbide powder, and easy and rapid agglomeration of powder, achieving Good powder crystallization, controllable synthesis process and low price

Inactive Publication Date: 2012-06-13
WUHAN UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the price of raw materials required by this method is high, and the powder is easy to agglomerate quickly in the post-processing process
[0008] Therefore, there are still some deficiencies in the current preparation technology of silicon carbide powder: such as high raw material prices, complicated process, difficult to control, uneven particle size distribution, easy agglomeration of powder particles, etc., which greatly limit The industrialization of silicon carbide powder

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] A silicon carbide powder and a preparation method thereof. First use 10~20wt% nano-silica, 0.5~1wt% carbon black, 70~80wt% sodium chloride and 9~15wt% aluminum powder as raw materials, and mix them evenly; In a tubular electric furnace, raise the temperature to 800-900°C at a rate of 4-6°C / min under an argon atmosphere, and keep it warm for 2-4 hours; then soak the obtained product in nitric acid with a concentration of 2-3mol / L After 3-5 hours, filter, wash with deionized water until the pH of the cleaning solution is 7.0, and finally dry at 110°C for 8-15 hours to obtain silicon carbide powder.

[0027] The silicon carbide powder prepared in this example has high purity, no particle agglomeration, and a particle size of 50-100 nm.

Embodiment 2

[0029] A silicon carbide powder and a preparation method thereof. First use 5~13wt% silicon micropowder, 1~2wt% earthy graphite powder, 80~88wt% potassium chloride and 5~10wt% aluminum powder as raw materials, and mix them evenly; In a tubular electric furnace, raise the temperature to 900~9500℃ at a rate of 5~8℃ / min under an argon atmosphere, and keep it warm for 3~6 hours; then put the obtained product into nitric acid with a concentration of 3.5~4.5mol / L Soak for 4-6 hours, filter, wash with deionized water until the pH of the cleaning solution is 7.0, and finally dry at 110°C for 12-18 hours to obtain silicon carbide powder.

[0030] The silicon carbide powder prepared in this example has high purity, no particle agglomeration, and a particle size of 80-160 nm.

Embodiment 3

[0032] A silicon carbide powder and a preparation method thereof. First use 10~20wt% nano-silica, 1.5~2.5wt% carbon black, 70~75wt% lithium chloride and 10~15wt% aluminum powder as raw materials, and mix them evenly; In a tubular electric furnace, raise the temperature to 940~1000℃ at a rate of 6~10℃ / min under an argon atmosphere, and keep it warm for 5~8 hours; then put the obtained product into nitric acid with a concentration of 2.5~3.5mol / L Soak in water for 5-8 hours, filter, wash with deionized water until the pH of the cleaning solution is 7.0, and finally dry at 110°C for 15-20 hours to obtain silicon carbide powder.

[0033] The silicon carbide powder prepared in this example has high purity, no particle agglomeration, and a particle size of 150-200 nm.

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Abstract

The invention specifically relates to silicon carbide powder and a preparation method thereof. According to a technical scheme, the preparation method comprises the following steps of: uniformly mixing 5-20 percent by weight of nano-silicon dioxide or silica micro-powder, 0.5-2.5 percent by weight of carbon black or amorphous graphite powder, 70-88 percent by weight of an alkali metal chloride and 5-15 percent by weight of aluminum powder serving as raw materials; putting the uniformly-mixed raw materials into a tubular electric furnace, raising the temperature to 800-1,000 DEG C at the temperature raising rate of 4-10 DEG C per minute under the atmosphere of argon, and preserving heat for 2-10 hours; and putting an obtained product into nitric acid of which the concentration is 2-5 mol/L for soaking for 3-8 hours, filtering, cleaning with deionized water till the pH value of a cleaning solution is 7.0, and drying at the temperature of 110 DEG C for 8-24 hours to obtain silicon carbide powder. The method has the characteristics of low reaction temperature, simple process, controllable synthesis process, low production cost, and the like; and the prepared silicon carbide powder has the characteristics of high crystallization, high product purity, freeness from an impure phase and powder particle size of 50-200 nanometers.

Description

technical field [0001] The invention belongs to the technical field of silicon carbide powder. It specifically relates to a silicon carbide powder and a preparation method thereof. Background technique [0002] Silicon carbide is one of the most commonly used non-oxide refractory raw materials in the field of refractory materials. SiC material has physical and chemical properties such as excellent corrosion resistance and wear resistance, high temperature strength, high thermal conductivity, small thermal expansion coefficient, and good thermal shock stability, so it has been widely used in metallurgy, machinery, chemical industry, building materials and other industrial fields. It is also popular in high-tech industries such as electronics, electrical, aerospace and so on. SiC was originally used as abrasives, abrasives and refractory materials, and later developed to be used as a raw material for heating elements (silicon carbon resistance rods). In the middle of the 20...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/36B82Y40/00C01B32/97
Inventor 王周福张少伟刘浩王玺堂张保国
Owner WUHAN UNIV OF SCI & TECH
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