Method for preparing trichlorosilane and dichlorosilane by hydrogenating silicon tetrachloride through microwave plasma

A hydrogenated silicon tetrachloride production, microwave plasma technology, applied in the direction of silicon halides, halosilanes, etc., can solve the problems of high equipment requirements, high energy consumption, low plasma ionization degree, etc., to achieve a high conversion rate, The effect of high ion density and simple system
CN101734666BInactive Publication Date: 2012-09-26INST OF PROCESS ENG CHINESE ACAD OF SCI
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
INST OF PROCESS ENG CHINESE ACAD OF SCI
Publication Date
2012-09-26
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention provides a method for preparing trichlorosilane and dichlorosilane by hydrogenating silicon tetrachloride through microwave plasma, which aims to solve the problems of high energy consumption, low single-pass conversion rate and high equipment investment in the catalytic hydrogenation of the silicon tetrachloride by a Siemens method and problems of high energy consumption and material consumption and difficult industrialization in hydrogenating the silicon tetrachloride by a conventional thermal plasma method and a radio-frequency induction plasma method in the conventional polysilicon industry. The method comprises the following steps: forming a stable cold plasma through arced hydrogen, argon or a mixture of the two under excitation of microwaves; forming a plasma jet flowby a plasma torch under the condition of the flow of the arced gas; and ejecting feed gas into a specific area of the plasma jet flow to form an active particle consumption zone in which the silicon tetrachloride is hydrogenated into trichlorosilane. The single-pass conversion rate of the silicon tetrachloride of the method reaches about 60 percent; and the method has the advantages of simple subsequent treatment of a product, low requirement on equipment and operation control, and easy realization of industrialization.
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Description

technical field

[0001] The invention relates to a method for producing trichlorosilane, in particular to a method for producing trichlorosilane and dichlorosilane by using microwave plasma hydrogenation technology. Background technique

[0002] In the current industrial production of polysilicon at home and abroad, most production plants adopt the Siemens method, using trichlorosilane chemical vapor deposition of polysilicon. Trichlorosilane is produced by catalytic reaction of hydrogen chloride and metallurgical silicon under the conditions of 300°C and 0.45MPa, and silicon tetrachloride is the main by-product of the reaction. Among the synthetic products, trichlorosilane accounts for about 80%, and silicon tetrachloride accounts for about 20%. The synthesis gas is separated by cold distillation, silicon tetrachloride is separated as a by-product, and the purified trichlorosilane enters the next step of polysilicon vapor deposition reaction.

[0003] The gas-phase deposit...

Claims

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