Ultra-high vacuum multifunctional integrated test system

An ultra-high vacuum and comprehensive testing technology, applied in the direction of measuring electricity, measuring devices, measuring electrical variables, etc., can solve problems such as no precedents, and achieve the effect of avoiding serious deviations

Active Publication Date: 2010-09-29
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Abstract
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Problems solved by technology

Develop a spectrum characteristic characterization system for micro-nano resonators with sample surface treatment and controllable sample environmental conditions. There is no precedent in the world so far.

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Embodiment Construction

[0043] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0044] The research on the characterization methods of materials and devices at the micro-nano scale is a key technical bottleneck in the development of science and technology today. Among them, the micro-nano resonator is one of the few micro-nano devices that are currently developed successfully and widely used. Research and development related Means of representation are more important and urgent. However, there is currently no system for characterizing the resonance characteristics of micro-nano resonators sold as commercial products. Several international research groups, including Stanford University, University of Michigan, University of California, Santa Barbara, Berkeley, Tohoku University, etc., are all Experime...

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Abstract

The invention discloses an ultra-high vacuum multifunctional integrated test system which is used for surface treatment, surface modification and in-situ characterization of micro-nano devices. The invention comprises a first ultra-high vacuum chamber, a second ultra-high vacuum chamber, a constant pressure chamber and a system frame, wherein the first ultra-high vacuum chamber and the second ultra-high vacuum chamber are connected in a sealing way, the constant pressure chamber is connected with the second ultra-high vacuum chamber in a sealing way, the system frame is of a rectangular frame, and the first ultra-high vacuum chamber, the second ultra-high vacuum chamber and the constant pressure chamber are fixed on the system frame to form the ultra-high vacuum test system. The invention realizes the integration of functions of surface treatment, surface modification and in-situ mechanical characterization, electrical performance test and the like of the micro-nano devices, avoids the serious deviation of test results, which is caused because the surface of a processed stamp is re-polluted during the process of the delivering and testing, and provides the guarantee for clearly and accurately studying the influence of surface damage on the mechanical and electrical properties of the devices.

Description

technical field [0001] The invention relates to the technical field of micro-nano devices, in particular to an ultra-high vacuum multifunctional comprehensive testing system capable of performing surface treatment and surface modification on micro-nano devices, and performing in-situ mechanical and electrical performance characterization. Background technique [0002] Miniaturization is a major trend in device development today. Micro-nano devices realized by micro-mechanical system (Micro Electromechanical System, MEMS) technology compatible with integrated circuits have the unique advantages of small size, high sensitivity, high integration, low cost and low power consumption, and will become an important part of the future information field. Indispensable core devices, therefore, micro-nano devices have received extensive attention and research all over the world. [0003] With the miniaturization of micro-nano devices, due to dimension and scale effects, the specific su...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N21/84G01R31/00G01N35/00
Inventor 杨晋玲刘云飞解婧杨富华
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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