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Semiconductor device and manufacturing method thereof

A manufacturing method, semiconductor technology, applied in the direction of semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve the problem of reducing the dielectric strength of semiconductor modules, and achieve the effect of preventing the reduction of dielectric strength

Active Publication Date: 2010-09-29
MITSUBISHI ELECTRIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, there is a fear that the dielectric strength of the semiconductor module will be lowered.

Method used

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  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0025] Hereinafter, the structure of the semiconductor device according to Embodiment 1 will be described. figure 1 It is a perspective view showing the semiconductor device of Embodiment 1. figure 2 It is a plan view showing the junction surface of the semiconductor module and the heat sink of Embodiment 1. image 3 It is a cross-sectional view of the semiconductor module and the heat sink of the semiconductor device according to Embodiment 1 at the fitting portion.

[0026] The semiconductor device of this embodiment includes a semiconductor module 10 and a heat sink 12 . A concave cylindrical fitting portion (first fitting portion) 16 and a convex square prism-shaped fitting portion (second fitting portion) 18 are provided on the bonding surface 14 of the semiconductor module 10 . In addition, screw holes 20 are provided at both ends of the semiconductor module 10 . Furthermore, a plurality of leads 22 are provided on both side surfaces of the semiconductor module 10 . ...

Embodiment approach 2

[0040] Hereinafter, the configuration of the semiconductor device according to Embodiment 2 will be described. Figure 5 It is a perspective view showing the semiconductor device of Embodiment 2. Figure 6 It is a plan view showing the junction surface of the semiconductor module and the heat sink of Embodiment 2. Figure 7 It is a sectional view of the semiconductor module and the heat sink of the semiconductor device according to Embodiment 2 at the fitting portion.

[0041] The semiconductor device of this embodiment includes a semiconductor module 10 and a heat sink 12 . Screw holes 20 are provided at both ends of the semiconductor module 10 . In addition, a first concave fitting portion (first fitting portion) 34 and a second concave fitting portion (second fitting portion) 36 are provided on the bonding surface 14 of the semiconductor module 10 . The first concave fitting portion 34 and the second concave fitting portion 36 are larger than the screw hole 20 and are pr...

Embodiment approach 3

[0054] Hereinafter, only the difference between the structure of the semiconductor device of Embodiment 3 and Embodiment 2 will be described. Figure 9 It is a plan view showing the junction surface of the semiconductor module and the heat sink of Embodiment 3. Figure 10 It is a cross-sectional view of the semiconductor module and the heat sink of the semiconductor device according to the third embodiment at the fitting portion.

[0055] A convex fitting portion (first fitting portion) 50 and a concave fitting portion (second fitting portion) 52 are provided on the bonding surface 14 of the semiconductor module 10 . On the other hand, a concave fitting portion (third fitting portion) 54 and a convex fitting portion (fourth fitting portion) 56 are provided on the joint surface 24 of the heat sink 12 . The concave fitting portion 54 on the heat sink 12 side has a shape that fits into the convex fitting portion 50 on the semiconductor module 10 side, and has a shape that does n...

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PUM

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Abstract

The invention provides a semiconductor device which can prevent a semiconductor module from being fixed on a radiating fin along a direction after rotating the semiconductor module for 180 degrees along a correct direction of the radiating fin and a manufacturing method thereof and provides a semiconductor device which can prevent the insulating strength of the semiconductor module decreasing and a manufacturing method thereof. The semiconductor device of the invention comprises a semiconductor module that has a first fitting portion and a second fitting portion arranged on a joint surface, the second fitting portion having a shape different from the first fitting portion, and a radiating fin that has a third fitting portion and a fourth fitting portion arranged on the joint surface, the fourth fitting portion having a shape different from the third fitting portion, wherein the semiconductor module is bonded to the radiating fin so that the first fitting portion is fitting into the third fitting portion or the third fitting portion is fitting into the first fitting portion, and the second fitting portion is fitting into the fourth fitting portion or the fourth fitting portion is fitting into the second fitting portion.

Description

technical field [0001] The present invention relates to a semiconductor device having a structure in which a semiconductor module is fixed to a heat sink and a method of manufacturing the same, and more particularly, to a method capable of preventing a semiconductor module from being fixed to a heat sink in a state rotated by 180 degrees from a correct direction relative to the heat sink A semiconductor device and a manufacturing method thereof, and a semiconductor device capable of preventing a reduction in the dielectric strength of a semiconductor module and a manufacturing method thereof. Background technique [0002] As is well known, conventional semiconductor devices having a structure in which a semiconductor module is fixed to a heat sink provide a concavo-convex structure on the bonding surface of the semiconductor module in order to improve heat dissipation of the semiconductor module (for example, refer to Patent Document 1). In this semiconductor device, the con...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/367H01L23/40H01L21/50
CPCH01L23/367H01L23/4006H01L2924/0002H01L2924/00
Inventor 白石卓也
Owner MITSUBISHI ELECTRIC CORP
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