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Photosensitive component as well as read method and read circuit thereof

A technology of a photosensitive device and a reading circuit, which is applied to the reading method and its semiconductor processing technology, fabrication, and design of photosensitive pixels, to achieve the effects of simplifying the processing technology, simplifying the processing technology, and increasing the photosensitive area.

Active Publication Date: 2010-10-06
BOLY MEDIA COMM SHENZHEN
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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  • Photosensitive component as well as read method and read circuit thereof
  • Photosensitive component as well as read method and read circuit thereof
  • Photosensitive component as well as read method and read circuit thereof

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Embodiment Construction

[0091] The invention includes a novel photosensitive device, a reading method, and a reading circuit.

[0092]According to one aspect of the present invention, in a photosensitive device as an example of the present invention, the photosensitive pixels have a pixel transfer function, especially a two-dimensional pixel transfer function. In this photosensitive device, the reading capacitance is completely canceled, but by setting and connecting adjacent pixels between some pixels or all pixels in the pixel array (it can be in two dimensions, up, down, left, right, or even in Multi-layer photosensitive devices, such as double-sided double-layer photosensitive devices, can also perform pixel transfer for photosensitive pixels located on the top and bottom surfaces of the base layer provided with pixel arrays. In this case, since the top photosensitive The pixel and the photosensitive pixel on the bottom surface are on different levels of the light direction, and the pixel transfe...

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Abstract

The invention relates to a photosensitive component as well as a read method and a read circuit thereof. The photosensitive component comprises a pixel array and a read circuit, wherein a transfer door which connects the adjacent pixels and realizes charge transfer between the connected pixels is at least arranged between parts of the pixels in the pixel array, the read circuit is used for reading the charge of one pixel from the pixel, and the charge is at least one of the self charge of the pixel, transfer charges from the pixels adjacent to the pixel, a charge formed by the superposition of the self charge of the pixel and the transfer charges of one or more pixels adjacent to the pixel and a charge formed by the superposition of the transfer charges of two or more pixels adjacent to the pixel. The photosensitive component has the characteristic of simple processing and reading modes.

Description

technical field [0001] The invention relates to a photosensitive device and its reading method, a reading circuit, especially the design, manufacture, reading method and semiconductor processing technology of the photosensitive pixel of a large array high-performance photosensitive chip. The invention combines mature CCD photosensitive chip technology and mature CMOS photosensitive chip technology to invent a new photosensitive device. Background technique [0002] The present invention is based on "Multi-spectral photosensitive device and its manufacturing method" (PCT / CN2007 / 071262), "Multi-spectral photosensitive device and its manufacturing method" (Chinese application number: 200810217270.2), and "A The continuation of "Multispectral Photosensitive Device and Its Sampling Method" (China Application No.: 200910105948.2), aims to provide more specific and optimal implementation of semiconductor circuits and chip levels, and even new semiconductor manufacturing technologie...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/144H04N5/335H04N25/00
Inventor 胡笑平
Owner BOLY MEDIA COMM SHENZHEN