Method for constructing interval wall
A spacer and structure technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as irregular sidewall fluctuations, and achieve the effect of weakening the influence and shortening the time
Inactive Publication Date: 2012-04-18
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORP
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Problems solved by technology
Therefore, the sidewall of the spacer 105 will also be etched, causing the sidewall of the spacer 105 to exhibit irregular undulations.
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[0024] The scheme of the embodiment of the present invention includes two aspects. On the one hand, a step is added before the main etching step to reduce the thickness of the silicon nitride film on the wafer surface, thereby shortening the time of the main etching, thus achieving the weakening of the main etching process. The purpose of the influence of the isotropic etching effect on the sidewall of the spacer wall; on the other hand, the content of oxygen in the reaction gas of the main etching is increased, and the purpose is to increase the reactant during the etching process-the generation of silicon oxide, oxidation Silicon gathers on the sidewall of the spacer to form a protective layer, further weakening the influence on the sidewall of the spacer.
[0025] In order to make the purpose, technical solution and advantages of the present invention clearer, the present invention will be further elaborated below in conjunction with the accompanying drawings. The etching o...
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The embodiment of the invention discloses a method for constructing an interval wall, which comprises the following steps of: determining the thickness value w2 of a required silicon nitride film based on the thickness value w1 of an interval wall to be constructed and corresponding relation table of w1 and w2 established by experiments in advance, wherein w2 is greater than w1; depositing a silicon nitride film of a certain thickness on the surface of a wafer comprising a monocrystalline silicon substrate and a polycrystalline silicon structure covering on the surface of the monocrystalline silicon substrate, wherein the thickness of the silicon nitride film is greater than the thickness value w2; reducing the thickness of the silicon nitride film on the surface of the wafer in an isotropic etching mode to enable the thickness of the silicon nitride film to reach w2; and carrying out the main etching process on the wafer in the direction perpendicular to the plane of the substrate to construct the interval wall of the thickness w1. The scheme of the invention can effectively inhibit the side wall defects of the interval wall.
Description
technical field [0001] The invention relates to the technical field of integrated circuit processing and manufacturing, in particular to a method for constructing a spacer wall. Background technique [0002] figure 1 An etching process for constructing a silicon oxide-silicon nitride (ON) spacer is shown, and its etching object is a wafer composed of a monocrystalline silicon substrate 101 and a polysilicon structure 102 on the surface of the substrate. The etching process includes: [0003] Deposit a layer of silicon oxide film 103 on the surface of the wafer; then deposit a layer of silicon nitride film 104 on the silicon oxide film 103; [0004] Place the wafer horizontally in a vacuumed reaction chamber, feed a reaction gas into the reaction chamber and ionize the reaction gas, apply a vertical bias to the reaction chamber, and perform a vertical orientation on the surface of the wafer against silicon nitride The main etching process of the film, the arrow shows the et...
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IPC IPC(8): H01L21/318H01L21/311H01L21/316
Inventor 沈满华李国锋
Owner SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORP