Method and system for assessing radiation resisting capability of device for satellite

A technology of anti-radiation and devices, which is applied to the evaluation method and system field of the anti-radiation capability of satellite devices, can solve problems such as order of magnitude errors, and achieve the effect of scientific risk assessment

Inactive Publication Date: 2013-01-16
BEIJING SHENGTAOPING TEST ENG TECH RES INST
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  • Summary
  • Abstract
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  • Claims
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AI Technical Summary

Problems solved by technology

However, empirical algorithms can lead to errors of the order of magnitude

Method used

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  • Method and system for assessing radiation resisting capability of device for satellite
  • Method and system for assessing radiation resisting capability of device for satellite
  • Method and system for assessing radiation resisting capability of device for satellite

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0038] S1. Conduct heavy ion single event effect test on the device to be tested, and obtain test data including heavy ion single event flipping saturation cross section, heavy ion single event effective LET value, heavy ion single event effect threshold, etc.;

[0039] S2. Calculate the proton single particle flip cross section according to the test data;

[0040] S3. Calculate the proton single event turnover rate according to the proton single event turnover section and the formula for calculating the proton single event turnover rate;

[0041] S4. Evaluate the radiation resistance of the device under test according to the proton single event turnover rate.

[0042] Among them, such as figure 2 As shown, step S2 further includes:

[0043] S2.1 Use the Weibull function to fit the test data to obtain the scale parameters and shape parameters;

[0044] Fit the complete heavy ion single particle σ-LET curve using Weibull function

[0045] σ(L)=σsat(1-exp{-[(L-L0) / w] s}).....

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Abstract

The invention relates to a method for assessing radiation resisting capability of a device for a satellite. The method comprises the following steps of: performing heavy ion single event effect test on the device to be tested to acquire a test data; fitting the test data by using a Weibull function to obtain a scale parameter and a shape parameter, and deducing a proton single event turnover section expression; calculating a proton single event turnover rate according to the proton single event turnover section expression and a proton single event turnover rate calculation formula; and assessing the radiation resisting capability of the device to be tested according to the proton single event turnover rate. The invention also relates to a system for assessing the radiation resisting capability of the device for the satellite.

Description

technical field [0001] The invention relates to the technical field of risk assessment of satellite devices, in particular to a method and system for evaluating the radiation resistance of satellite devices. Background technique [0002] Satellite systems use a large number of semiconductor integrated circuits, such as microprocessors (CPU), digital signal processors (DSP), field programmable logic arrays (FPGA), memory (Memory), and gate circuits, etc., but semiconductors used in satellites Integrated circuits will encounter very harsh environments in space, such as radiation environments, thermal vacuum environments, and micrometeorite / space debris environments. [0003] The space radiation environment will cause ionization damage and / or atomic displacement damage to semiconductor integrated circuits. Atomic displacement damage is the displacement of atoms after high-energy protons are incident on semiconductor materials, causing lattice defects and resulting in degradati...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01R31/00
Inventor 王群勇阳辉陈冬梅陈宇刘燕芳孙旭朋宋岩白桦
Owner BEIJING SHENGTAOPING TEST ENG TECH RES INST
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