Method and system for assessing radiation resisting capability of device for satellite

Abstract

The invention relates to a method for assessing radiation resisting capability of a device for a satellite. The method comprises the following steps of: performing heavy ion single event effect test on the device to be tested to acquire a test data; fitting the test data by using a Weibull function to obtain a scale parameter and a shape parameter, and deducing a proton single event turnover section expression; calculating a proton single event turnover rate according to the proton single event turnover section expression and a proton single event turnover rate calculation formula; and assessing the radiation resisting capability of the device to be tested according to the proton single event turnover rate. The invention also relates to a system for assessing the radiation resisting capability of the device for the satellite.

Description

technical field

[0001] The invention relates to the technical field of risk assessment of satellite devices, in particular to a method and system for evaluating the radiation resistance of satellite devices. Background technique

[0002] Satellite systems use a large number of semiconductor integrated circuits, such as microprocessors (CPU), digital signal processors (DSP), field programmable logic arrays (FPGA), memory (Memory), and gate circuits, etc., but semiconductors used in satellites Integrated circuits will encounter very harsh environments in space, such as radiation environments, thermal vacuum environments, and micrometeorite / space debris environments.

[0003] The space radiation environment will cause ionization damage and / or atomic displacement damage to semiconductor integrated circuits. Atomic displacement damage is the displacement of atoms after high-energy protons are incident on semiconductor materials, causing lattice defects and resulting in degradati...

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