MOS (Metal Oxide Semiconductor) grid base electrode switching tetrode

Abstract

The invention relates to an MOS grid base electrode switching tetrode which is a novel four-terminal MOS grid power switching element which is additionally provided with an MOS control grid on the base electrode channel of a bipolar device (a bipolar transistor or a bipolar transistor in a bipolar transistor). The tetrode combines the advantages of the simplicity of an MOS grid driving circuit and the high current density conduction capacity of the bipolar device and has an amplification switching function. The invention provides the device structures and the specific implementation modes of a single channel and complementary channel MOS grid base electrode switching tetrode transistor with a plane grid and groove grid structure and an MOS grid base electrode switching tetrode transistor;the device structures and the specific implementation modes are compatible with the manufacturing processes of power MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) and IGBT (Insulated Gate Bipolar Translator) and are simpler much more than the structure and the process of a four-terminal emitter switching bipolar transistor (ESBT). The lambda negative resistance-type negative slope saturation characteristics of the transistors have better anti-dV / dt capacity, and the current negative temperature coefficient thereof are beneficial to the parallel connection of a large number of unit cells. The principles of the devices can also be used for manufacturing various compound semiconductor MOS grid base electrode switching tetrode transistors and thyristors.

Description

technical field [0001] The invention belongs to the field of semiconductor power switching devices, and in particular relates to a four-terminal power switching device using an insulating gate to control large current. [0002] The present invention includes the following closely related sub-inventions under the general idea of ​​using MOS gates to switch the small base currents of power bipolar devices to achieve switching their large output currents: single-channel MOS gate-base switching quadrupole transistors; complementary Trench MOS gate base switch quadrupole transistor; single channel MOS gate base switch quadrupole thyristor; complementary channel MOS gate base switch quadrupole thyristor. Background technique [0003] Power Metal-Oxide-Semiconductor Field Effect Transistor (Power MOSFET), Insulated Gate Bipolar Transistor (Insulated Gate Bipolar Transistor, referred to as IGBT), MOS Gate Thyristor (MOS-Gated Thyristor, referred to as MGT), etc. use MOS gate to cont...

AI Technical Summary

Problems solved by technology

Secondly, due to the complexity of the device structure and process, it is difficult to optimize the adjustment of the device's structural parameters and process parameters. For example, in order to ensure that the p+ penetration deep diffusion can exceed n+The doping concentration of the buried layer, the doping concentration of the n+ buried layer (the emitter region of the NPN tube) should not be too high, which makes it difficult to improve the current gain and current output capability of the NPN tube

Third, ESBT is a direct switch emitter current IE, no amplification function

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