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Semiconductor device and semiconductor device fabrication method

A manufacturing method and semiconductor technology, applied in semiconductor devices, semiconductor/solid-state device components, electric solid-state devices, etc., can solve problems such as vacancies and cracks in semiconductor devices, and achieve the effect of high weather resistance

Inactive Publication Date: 2011-01-26
PANASONIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If the semiconductor device itself is subjected to a heating process such as reflow soldering in a subsequent process, defects such as vacancies and cracks will occur in the semiconductor device due to the rapid expansion of moisture.

Method used

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  • Semiconductor device and semiconductor device fabrication method
  • Semiconductor device and semiconductor device fabrication method
  • Semiconductor device and semiconductor device fabrication method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0048] exist figure 1 The structure of the semiconductor device 1 of Embodiment 1 is schematically shown in . figure 1 (b) is a plan view, figure 1 (a) is along figure 1 (b) Cross-sectional view of line A-A'. figure 1 (c) is along figure 1 (b) Cross-sectional view of line B-B'. It should be noted that, for the convenience of explanation, in figure 1 In (b), the translucent first resin 24 and the covering layer 30 which are sealing resins are transparentized to show the internal structure.

[0049] The semiconductor device 1 has a structure in which a semiconductor element 10 is mounted on an element mounting portion 8 of a substrate (base material) 3 on which external terminals 18 serving as electrodes are arranged. The semiconductor element 10 of this embodiment is an optical semiconductor element, and has a light-emitting or light-receiving region (hereinafter, the combination of the light-emitting region and the light-receiving region is referred to as an operating re...

Embodiment approach 2

[0077] The semiconductor device according to Embodiment 2 is a so-called lead frame type semiconductor device. Hereinafter, this will be described.

[0078] use Figure 7 A method of manufacturing a lead frame type semiconductor device will be roughly described. The lead frame 46 ( Figure 7(a)). As a specific material of the tape 42, PET (polyethylene terephthalate: polyethylene terephthalate), PEN (polyethylene naphthalate: polyethylene naphthalate), polyimide, etc. can be suitably used. The plurality of external terminals 18' are collectively connected by a runner 48. They may be temporarily fixed by an adhesive or the like applied to the tape 42 . The die pad 44 is an element mounting portion on which the semiconductor element 10 is mounted. In addition, the die pad 44 is not integrated with the external terminal 18'. However, the lead frame 46 including the die pad 44 and the external terminals 18' can be referred to as a base material because it is integrated afte...

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PUM

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Abstract

Disclosed is a semiconductor device made from a multiplicity of materials, wherein boundary lines between a multiplicity of materials are exposed on the cut face during fabrication in a step in which a multiplicity of adhered materials is cut. There is residual internal strain from cutting at these boundary lines, making them susceptible to infiltration of moisture and corrosive gas. Therefore, the boundary lines presented at the cut face are covered with a covering layer to prevent infiltration of moisture and gas, etc. At this time, a partial cut is made that exposes the boundary lines without separating the semiconductor devices from one another, so that the cover layer can be formed in one batch with the multiplicity of semiconductor devices still attached to a substrate.

Description

technical field [0001] The present invention relates to a semiconductor device and a method for manufacturing the semiconductor device, and more particularly, to a semiconductor device in which a semiconductor element mounted on a substrate is covered with a resin, and a method for manufacturing the semiconductor device. Background technique [0002] A semiconductor device has a structure in which a semiconductor element is arranged on a substrate on which electrodes are arranged and covered with a transparent protective layer. This is because the connecting portion of the semiconductor element and the substrate, and the semiconductor element itself are protected from corrosion and dust caused by moisture contained in the outside air. [0003] As a conventionally known problem, a problem arises in the case of fixing a semiconductor element die on a metal film and molding it with a resin. More specifically, first, an oxide layer is formed when the semiconductor element die i...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/12H01L23/29H01L23/31
CPCH01L24/97H01L23/49541H01L23/49805H01L2924/01004H01L24/48H01L2924/01079H01L2224/48247H01L2224/48227H01L23/49548H01L24/49H01L23/3107H01L2224/48091H01L2224/49171H01L2224/97H01L2924/00014H01L2924/181H01L2924/3025H01L2924/00H01L2924/00012H01L2224/45099H01L2224/45015H01L2924/207H01L2224/85
Inventor 吉川则之福田敏行古屋敷纯也丝冈敏昌宇辰博喜
Owner PANASONIC CORP