Wafer transmission system of ion implantation machine and wafer transmission method thereof
A technology of ion implantation and transmission system, which is applied in the field of ion implanter wafer transmission system and its wafer transmission.
Inactive Publication Date: 2011-02-02
TSINGHUA UNIV
View PDF5 Cites 19 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
This system puts the wafer positioning process in the vacuum target chamber which reduces the overall efficiency of ion implanter wafer transfer
In addition, although the system has two spaces for holding wafers, only one transport mechanism works in each space, and the transport efficiency still needs to be improved
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0028] see figure 1 , The ion implanter wafer transfer system includes a vacuum target chamber 1, a left film transfer manipulator 2, a middle film transport manipulator 3, a right film transport manipulator 4, a left isolation valve 5, a right isolation valve 6, a left film warehouse 7, and a right film warehouse 8 and ion implantation target stage 9. The left film conveying manipulator 2, the middle film conveying manipulator 3, and the right film conveying manipulator 4 are all fixed in the vacuum target chamber 1, and the three are arranged according to the left, middle and right sides. The left film transporting manipulator 2 and the right film transporting manipulator 4 are arranged symmetrically with respect to the middle film transporting manipulator 3 . The left isolation valve 5 isolates the left film storehouse 7 and the vacuum rake chamber 9; the right isolation valve 6 isolates the right film storehouse 8 and the vacuum rake chamber 9. The wafers contained in th...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention relates to a wafer transmission system of ion implantation machine and a wafer transmission method thereof. The wafer transmission system of ion implantation machine comprises a vacuum target chamber, a left wafer transmission manipulator, a middle wafer transmission manipulator, a right wafer transmission manipulator, a left isolation valve, a right isolation valve, a left wafer warehouse, a right wafer warehouse and an ion implantation target platform; wherein the left wafer transmission manipulator, the middle wafer transmission manipulator and the right wafer transmission manipulator are all fixed in the vacuum target chamber; the left isolation valve isolates the left wafer warehouse and the vacuum target chamber, and the right isolation valve isolates the right wafer warehouse and the vacuum target chamber; the ion implantation target platform is arranged in the vacuum target chamber; the work place of the left wafer transmission manipulator includes the left waferwarehouse and the ion implantation target platform, the work place of the middle wafer transmission manipulator includes the left wafer warehouse, the right wafer warehouse and the ion implantation target platform, and the work place of the right wafer transmission manipulator includes the right wafer warehouse and the ion implantation target platform. The system adopts three manipulators to co-ordinately transmit wafer, thus greatly improving wafer transmission efficiency.
Description
technical field [0001] The invention relates to the field of integrated circuit manufacturing equipment, in particular to an ion implanter wafer delivery system and a wafer delivery method thereof. Background technique [0002] Ion implantation technology is a high-tech material surface modification technology that has been vigorously developed and widely used internationally in the past 30 years. The basic principle is: use an ion beam with an energy of 100keV to enter the material, a series of physical and chemical interactions will occur between the ion beam and the atoms or molecules in the material, the incident ions will gradually lose energy, and finally stay in the In the material, and cause changes in the surface composition, structure and properties of the material. Ion implantation technology has been widely used in doping semiconductor materials. The ion implanter wafer transfer system is an important part of the ion implanter, which mainly completes the transf...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More IPC IPC(8): H01L21/677
Inventor 付成龙陈恳万超周于刘志杨开明朱煜
Owner TSINGHUA UNIV