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Flash light annealing for thin films

A technology of light source and pulse light source, which is applied in the field of pulse flood light source and can solve the problems of lack of high-quality crystal film practical technology

Inactive Publication Date: 2011-02-09
THE TRUSTEES OF COLUMBIA UNIV IN THE CITY OF NEW YORK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, these films are not optimal for use in solar cells
Thus, there is still a lack of practical techniques for growing high-quality crystalline films using the FLA method

Method used

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  • Flash light annealing for thin films
  • Flash light annealing for thin films
  • Flash light annealing for thin films

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Embodiment Construction

[0053] The present application provides methods and systems for efficiently and cost-effectively producing silicon thin films suitable for use in solar cells. This application uses flash lamp technology or other low cost pulsed flood sources such as diode lasers to provide pulsed melting of silicon films under conditions that provide a mixed liquid / solid phase. The solid phase provides seed sites for crystalline growth of silicon from the liquid phase. Under suitable conditions, highly textured poly-Si layers were obtained. In one or more embodiments, a poly-Si layer having a strong (100) texture is provided. The present application also uses a flash lamp anneal to create a seed layer in the epitaxial growth process used to fabricate solar cells. As will be apparent from the description below, the method is not limited to silicon thin film crystallization and can be used for any thin film that exhibits increased reflectivity upon melting. For the purposes of the discussion ...

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Abstract

A method of making a crystalline film includes providing a film comprising seed grains of a selected crystallographic surface orientation on a substrate; irradiating the film using a pulsed light source to provide pulsed melting of the film under conditions that provide a mixed liquid / solid phase and allowing the mixed solid / liquid phase to solidify under conditions that provide a textured polycrystalline layer having the selected surface orientation. One or more irradiation treatments may be used. The film is suitable for use in solar cells.

Description

[0001] related application [0002] This application is related to co-pending, commonly owned applications Serial Nos. 61 / 111,518, filed November 5, 2008 and 61 / 032,781, filed February 29, 2008, both of which are hereby incorporated by reference The method is incorporated in its entirety. technical field [0003] The disclosed subject matter generally relates to the crystallization of thin films and more particularly to the use of pulsed flood light sources in such crystallization. Background technique [0004] Some solar cells use a crystalline silicon film as a support. Solar cells use smaller supports, and in order to have reasonable efficiencies they require films with low defect densities. Defects within the crystalline silicon film include grain boundaries, which are boundaries between crystal grains, and intra-grain defects, which are defects within crystal grains, such as twin boundaries and stacking faults. In order to increase the efficiency of solar cells, it i...

Claims

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Application Information

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IPC IPC(8): H01L21/268
CPCH01L31/03762Y02E10/548H01L21/02425H01L21/02686Y02E10/547H01L31/1804H01L31/1872H01L21/02532H01L31/072H01L31/0236H01L21/2686H01L21/02609H01L21/67115H01L31/03921H01L31/028H01L21/02667Y02P70/50
Inventor J·S·艾姆P·C·范·德·威尔特尤金·钟
Owner THE TRUSTEES OF COLUMBIA UNIV IN THE CITY OF NEW YORK
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