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Light emitting device and method for manufacturing the same

A light-emitting device, vertical technology, applied to semiconductor devices, electrical components, circuits, etc., can solve the problems of reducing light intensity and deteriorating the reliability of light-emitting devices

Active Publication Date: 2011-03-23
SUZHOU LEKIN SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Meanwhile, in the vertical LED structure in which the first electrode layer applying the voltage to the first conductive type semiconductor layer and the second electrode layer applying the voltage to the second conductive type semiconductor layer are arranged in the vertical direction, the current may not be wide flow in the region and may concentrate flow on the underside of the first electrode layer
If the current flows concentratedly in a specific area, the operating voltage may increase to reduce the intensity of light, thus deteriorating the reliability of the light emitting device

Method used

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  • Light emitting device and method for manufacturing the same
  • Light emitting device and method for manufacturing the same
  • Light emitting device and method for manufacturing the same

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Embodiment Construction

[0026] In the following description, it will be understood that when a layer (or film) is referred to as being "on" another layer or substrate, it can be directly on the other layer or substrate, or there may also be middle layer. Further, it will be understood that when a layer is referred to as being "under" another layer, it can be directly under the other layer, and one or more intervening layers may also be present. In addition, it will also be understood that when a layer is referred to as being "between" two layers, it can be the only layer between the two layers, or one or more intervening layers may also be present.

[0027] In the drawings, the thicknesses of regions and layers are exaggerated for clarity. Also, the size of each element does not utterly reflect an actual size.

[0028] Hereinafter, a light emitting device and a method for manufacturing the light emitting device according to embodiments will be described in detail with reference to the accompanying ...

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Abstract

According to an embodiment of this invention, a light-emitting element comprises: a second electrode layer; a second electrically conductive semiconductor layer on the second electrode layer; a current blocking layer comprising an oxide of the second electrically conductive semiconductor layer; an active layer on the second electrically conductive semiconductor layer; a first electrically conductive semiconductor layer on the active layer; and a first electrode layer on the first electrically conductive semiconductor layer.

Description

technical field [0001] The present disclosure relates to a light emitting device and a method for manufacturing the light emitting device. Background technique [0002] Recently, many studies have been conducted on devices using light emitting diodes (LEDs) as light emitting devices. [0003] LEDs are devices that convert electrical signals into light by using the properties of compound semiconductors. The LED has a stack structure including a semiconductor layer of a first conductivity type, an active layer, and a semiconductor layer of a second conductivity type, and emits light from the active layer when a voltage is applied. The first conductive type semiconductor layer may be an n-type semiconductor layer, and the second conductive type semiconductor layer may be a p-type semiconductor layer, and vice versa. [0004] Meanwhile, in the vertical LED structure in which the first electrode layer applying the voltage to the first conductive type semiconductor layer and the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/14
CPCH01L33/145H01L33/0079H01L33/0093
Inventor 朴炯兆
Owner SUZHOU LEKIN SEMICON CO LTD