Cache system of Not AND (NAND) flash memory and cache method

A caching system and caching technology, applied in memory systems, memory address/allocation/relocation, instruments, etc., can solve the problem of long time for writing data, inability to adapt to mixed access mode of random access, and NAND flash memory storage system cannot page data Deal with cache system and other issues with block data organization to achieve the effect of enhancing adaptability and availability

Active Publication Date: 2011-04-13
TSINGHUA UNIV
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Problems solved by technology

Nevertheless, NAND flash memory has three main disadvantages: (1) it cannot rewrite data in place; (2) it takes a long time to write data, and it takes a relatively long time to write data before rewriting data. Erase operation; (3) The erasing times of a flash storage unit are limited, so the erasing operation will affect its service life
They can only adapt to a small part of the access type, such

Method used

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  • Cache system of Not AND (NAND) flash memory and cache method
  • Cache system of Not AND (NAND) flash memory and cache method
  • Cache system of Not AND (NAND) flash memory and cache method

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Embodiment Construction

[0034] The specific implementation manners of the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. The following examples are used to illustrate the present invention, but are not intended to limit the scope of the present invention.

[0035] Such as figure 1 As shown, the caching system 10 of the NAND flash memory of the present invention includes: a two-stage hash storage module 101, a read-write interface module 104, a page data cache organization module 102 and a block data cache organization module 103, a page data cache organization module 102 and a block data The cache organization module 103 is connected to the two-level hash storage module 101 and the read-write interface module 104, and the two-level hash storage module 101 is used to record the storage location information of the data in the cache. The two-level hash storage module 101 includes:

[0036] The first-level hash storage module i...

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Abstract

The invention discloses a cache system of a Not AND (NAND) flash memory, comprising a two-level Hash storage module 101, a read-write interface module 104, a page data cache organization module 102 and a block data cache organization module 103, wherein the page data cache organization module 102 and the block data cache organization module 103 are both connected with the two-level Hash storage module 101 and the read-write interface module 104; the two-level Hash storage module 101 is used for recording data stored in the cache; the page data cache organization module 102 is used for organizing a page data cache queue in the cache; the block data cache organization module 103 is used for organizing a block data cache queue in the cache; and the page data cache organization module 102 and the block data cache organization module 103 read and write the data in a flash memory by the read-write interface module 104. By the system and the method of the invention, the adaptability and availability of the cache system on a file system are strengthened.

Description

technical field [0001] The invention relates to the technical field of computer storage, in particular to a cache system and a cache method of a NAND flash memory. Background technique [0002] Today, NAND (Not AND) flash memory has become the main storage medium of mobile devices. It has the advantages of random access, high throughput, low energy consumption, strong shock resistance, and small size. Therefore, in the field of personal computer and server storage, it is likely to become the main medium to replace disk as secondary storage. Nevertheless, NAND flash memory has three main disadvantages: (1) it cannot rewrite data in place; (2) it takes a long time to write data, and it takes a relatively long time to write data before rewriting data. Erase operation; (3) The erasure times of a storage unit of a flash memory are limited, so the erase operation will affect its service life. These three major shortcomings all need to be reasonably resolved in a practical NAND ...

Claims

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Application Information

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IPC IPC(8): G06F12/08G06F12/0882G06F12/0893
Inventor 胡事民白石
Owner TSINGHUA UNIV
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