Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Chemical vapor deposition method for preparing diamond single crystal by adding N2O gas

A chemical vapor deposition and diamond single crystal technology, applied in chemical instruments and methods, single crystal growth, single crystal growth, etc., can solve problems such as deepening of single crystal color and affecting the quality of diamond single crystal

Active Publication Date: 2012-06-20
JILIN UNIV
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The closest to the present invention is the invention patent with application number 200710055326.4, the growth assist gas used in this invention patent is N 2 , the introduction of nitrogen can increase the growth rate, but the color of the single crystal is deepened at high nitrogen concentration, which affects the quality of diamond single crystal

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Chemical vapor deposition method for preparing diamond single crystal by adding N2O gas
  • Chemical vapor deposition method for preparing diamond single crystal by adding N2O gas
  • Chemical vapor deposition method for preparing diamond single crystal by adding N2O gas

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] The ASTex 5250 type 5kw (2.45GHz) microwave plasma chemical vapor deposition equipment of Seki Company is used, and the high temperature and high pressure type Ib single crystal (100) diamond is used as the substrate, and the single crystal diamond is grown at a high speed by homoepitaxial growth. The upper and lower (100) sides of the single crystal diamond substrate are mechanically polished, then ultrasonically cleaned in acetone, and finally placed in a polycrystalline diamond-like crystal holder and placed in a deposition chamber. First pump down the pressure in the deposition chamber to below 0.1Pa. The gases used in the experiment are high-purity methane (purity 99.99%), hydrogen (purity 99.999%) and laughing gas (purity 99.999%). In the growth stage, hydrogen, methane and nitrous oxide were fed, and the flow rates were 750, 75, and 2 sccm respectively; the growth was carried out for 2 hours under the conditions of a pressure of 13 kPa and a microwave power of 2....

Embodiment 2

[0022] The deposition system is the same as in Example 1. In the growth stage, hydrogen, methane and nitrous oxide were introduced, and the flow rates were 750, 90, and 2 sccm respectively; the growth was carried out for 2 hours under the conditions of a pressure of 40 kPa and a microwave power of 2.0 kw. The temperature of the substrate in the growth stage was measured to be 1000° C. by an infrared thermometer (IR-GZ01N type produced by CHINO Corporation, Japan). The color of the obtained single crystal is yellow, the surface has a slight orange-peel-like texture, which is relatively smooth, and the growth rate is 135 μm / h.

Embodiment 3

[0024] The deposition system is the same as in Example 1. In the growth stage, hydrogen, methane and nitrous oxide were introduced, and the flow rates were 750, 90, and 5 sccm respectively; the growth was carried out for 2 hours under the conditions of a pressure of 40 kPa and a microwave power of 2.0 kw. The temperature of the substrate in the growth stage was measured to be 1000° C. by an infrared thermometer (IR-GZ01N type produced by CHINO Corporation, Japan). The color of the obtained single crystal is light yellow, the surface is smooth, and the growth rate is 125 μm / h.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a chemical vapor deposition method for preparing diamond single crystal by adding N2O gas, and belongs to the technical field of diamond single crystal materials and preparation methods thereof. A microwave plasma chemical vapor deposition system is adopted. The method comprises the following steps of: putting a polished and ultrasonic cleaned single crystal diamond substrate into a deposition chamber, and introducing hydrogen, methane and laughing gas into the deposition chamber, wherein the flow ratio of H2: CH4: N2O is 750: 75-90: 2-10; and growing the diamond single crystal under microwave power of between 2 and 2.5kw, at the substrate temperature of between 900 and 1,100 DEG C and under air pressure of between 13 and 40kPa. The method is simple, and has the advantages of good quality, low cost, low pollution and the like; and under the condition that the increased N2O concentration affects the global climate warming effect remarkably increasingly, the method makes use of the waste gas, saves energy, reduces emission and promotes the production of diamond.

Description

technical field [0001] The invention belongs to the technical field of diamond single crystal material and preparation method thereof, and relates to a method for high-speed growth of diamond single crystal by plasma chemical vapor deposition. Background technique [0002] Since the 1980s, the chemical vapor deposition (Chemical Vapor Deposition-CVD) method has been used internationally to prepare diamond films. This method has been developed rapidly due to its low cost and the ability to deposit polycrystalline diamond films on a large area, and has been technically mature. However, due to the large number of grain boundaries and defects in the polycrystalline film, it cannot meet the requirements of diamond in electronic devices; and the growth rate of single crystal diamond grown by homoepitaxial method is low (generally less than 5-10 microns / hour) , growing a diamond single crystal film with a thickness of millimeters requires continuous growth of more than 100-200 hou...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C30B25/02C30B25/20C30B29/04
Inventor 李红东苏颖吕宪义王启亮成绍恒
Owner JILIN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com