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Thin film transistor and method for manufacturing the same

A thin-film transistor and thin-film technology, applied in the direction of transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve problems such as insufficient current drive capability, inability to supply current, and increased rated on-resistance

Active Publication Date: 2011-04-27
JOLED INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0021] However, this structure has a disadvantage that the current driving capability is insufficient to the extent that the channel region controlled by the electric field induced by the gate electrode is halved in the direction of the gate width (direction orthogonal to the direction of the channel current). Cannot supply a large amount of current equal to the current supplied when the on-resistance is large
That is, although the trade-off between parasitic capacitance and leakage current is alleviated to some extent, the rated on-resistance increases, so this structure is not preferable
[0022] As mentioned above, the techniques disclosed in the aforementioned patent documents cannot eliminate or alleviate the trade-off between parasitic capacitance and leakage current without compromising on-resistance
Therefore, when any existing thin-film transistor is used as an element of a pixel circuit in a display device, it is impossible to display an image at high speed while avoiding a luminous point or a flickering point.

Method used

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  • Thin film transistor and method for manufacturing the same
  • Thin film transistor and method for manufacturing the same
  • Thin film transistor and method for manufacturing the same

Examples

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no. 3 example

[0131] This embodiment relates to a bottom gate staggered TFT including a semiconductor channel protection film 16, and the (third) case involved in this embodiment is that the linear edge of the gate electrode is at a position on the contour portion 30 It overlaps with the concave portion of the contour portion 30.

[0132] Image 6 Is a floor plan, Figure 7 For the edge Image 6 A cross-sectional view of the C-C section line shown in.

[0133] The second embodiment ( Figure 4 The arrangement shape of) is: the gate electrode has a convex shape, and the linear contour portion 30 overlaps the convex portion.

[0134] In contrast, the arrangement shape of the TFT 10C of the third embodiment is such that the contour portion 30 has a convex portion that overlaps the linear edge of the gate electrode 13.

[0135] Specifically, in Image 6 Among them, the semiconductor channel protection film 16 has recesses on the drain electrode side and the source electrode side, respectively. Each ed...

no. 4 example

[0145] Figure 8A Is a schematic floor plan, Figure 8B It is a schematic diagram showing the structure in the vertical direction. This schematic structural diagram shows the approximate extent to which the semiconductor film formed with the channel and the source / drain electrodes overlap along the channel length direction. Figure 8B The gate electrode adjacent to the edge point with the shortest distance is shown.

[0146] The fourth embodiment relates to a bottom-gate staggered TFT including the semiconductor channel protection film 16, and relates to the case where the gate electrode 13 overlaps the contour portion 30 over the entire width thereof (the fourth type).

[0147] Such as Figure 8A As shown, the width of the gate electrode 13 is smaller than the length of the contour portion 30, and the gate electrode 13 overlaps the contour portion 30 over its entire width. The gate electrode 13 is provided in a layer below the semiconductor film 15 and close to the edge point 31 a...

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Abstract

The invention relates to a thin film transistor, comprising an insulating film, a gate electrode which is located in the insulating film and has periphery when in a plane, a semiconductor thin film on the insulating film, a channel protection film which is located on the semiconductor thin film and has periphery with two opposite edges when in the plane, a first electrode which is arranged on the semiconductor thin film and has a portion overlapped with one edge of the channel protection film, and a second electrode which is disposed on the semiconductor thin film and has a portion overlapped with the other edge of the channel protection film, wherein in the plane, edge points exist at a position where the first or second electrode and the edges of the channel protection film are overlapped, one edge point is a portion along the periphery of the channel protection film, and at least one edge point is located at the outer side of the periphery of the gate electrode. The thin film transistor enables to eliminate or alleviate the tradeoff between parasitic capacitance and leakage current without conduction resistance loss.

Description

[0001] Cross reference of related applications [0002] This application claims the priority of Japanese prior patent application JP2009-227013 filed with the Japan Patent Office on September 30, 2009, and the entire content of the prior application is hereby incorporated by reference. Technical field [0003] The present invention relates to a thin film transistor and a method of manufacturing a thin film transistor. The thin film transistor is used in a semiconductor device. The thin film transistor has a gate electrode and two other electrodes (a source electrode and a drain electrode), and these electrodes are formed on a semiconductor thin film laminated on a substrate in a state of being insulated from the substrate Above, the gate electrode can control the formation of the channel. Background technique [0004] When a thin film transistor is used as an element of a pixel circuit in a display device, if the current flowing between the source and the drain is large when the ga...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/786H01L29/41H01L21/336
CPCH01L29/66765H01L29/41733H01L29/78609H01L29/78696H01L29/458H01L29/78606
Inventor 菅野道博河村隆宏
Owner JOLED INC