Detection method used for failure analysis of semiconductor device

Abstract

The invention relates to a detection method used for failure analysis of a semiconductor device, comprising the following steps of: grinding a deficient section of the semiconductor device by utilizing a focused ion beam so as to change surface property of a source / drain region; corroding the section of the semiconductor device by utilizing a corrosion treatment solution so as to expose the section feature of the source / drain region; and obtaining image information corresponding to the section of the semiconductor device by utilizing an amplifying imaging device, and observing the image information to obtain the distribution condition of the defect generated by the semiconductor device. In the invention, through the combination of grinding of the focused ion beam and corroding of the corrosion treatment solution, the section feature of the source / drain region of the semiconductor device which is easily observed is obtained, and the basis of judging whether the device is in failure or not is provided.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a detection method for failure analysis of semiconductor devices. Background technique [0002] For the mass production of semiconductor devices, it is desirable to provide a profitable and reliable process technology. A process for improving reliability and stability of process technology includes the steps of designing a semiconductor device, manufacturing a sample of the semiconductor device, and testing the sample. Failure analysis of semiconductor devices is a feedback process that involves finding and correcting the root cause of defects to overcome the problems created by the defects. [0003] Proper failure analysis is critical to improving the quality of semiconductor devices. Incorrect failure analysis can lengthen the period required to develop and ramp up semiconductor device products. Generally, failure analysis includes external inspection, non-destruct...

AI Technical Summary

Problems solved by technology

However, due to the miniaturization of the size of semiconductors, especially for the 65nm process and below, the junction depth is shallow, and the problem of over-etching often occurs when using an etching solution.

figure 1 It is the secondary electron image picture after the semiconductor device is corroded by the corrosion treatment solution, such as figure 1 As shown, after being corroded by the etching treatment solution, the gate region 401 or the source / drain region 402 in the semiconductor device is damaged, which cannot truly reflect the depth of the source / drain region, resulting in poor observation effect and unable to accurately locate the position of the defect.

When the corrosion time is reduced to about 1 second to 2 seconds, the corrosion speed is too fast, the control is difficult, the repeatability and reliability of the corrosion treatment are poor

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