Unlock instant, AI-driven research and patent intelligence for your innovation.

Manufacturing method of connection hole

A manufacturing method and a technology for connecting holes, which are applied in the manufacture of semiconductor/solid-state devices, electrical components, circuits, etc., can solve the problems of reducing the electrical insulation performance of devices and affecting product quality, etc.

Inactive Publication Date: 2015-04-01
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORP +1
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The technical problem to be solved by the present invention is that during the formation process of the existing connection hole, the opening of the connection hole will be enlarged, resulting in a decrease in the electrical insulation performance of the device and affecting the quality of the product

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Manufacturing method of connection hole
  • Manufacturing method of connection hole
  • Manufacturing method of connection hole

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0018] In order to improve the problem that the opening of the connecting hole is enlarged in the existing method for making the connecting hole, the present invention proposes an improved method for making the connecting hole, see image 3 , including the following processes: S1, providing a substrate; S2, depositing a dielectric layer on the substrate; S3, using a photolithography process to form a photoresist pattern on the dielectric layer; S4, using the photoresist pattern as a mask dry method Etching the dielectric layer to expose the substrate, forming via holes, and stripping the photoresist pattern; S5, using PECVD process to deposit a repair layer on the surface of the dielectric layer, side walls and bottom of the via hole; S6, using an etch-back process to remove part of the repair layer , exposing the substrate to form connection holes.

[0019] Combined with Figure 4 below to image 3 The flow shown is described in detail:

[0020] S1, providing a substrate.

...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to a manufacturing method of a connection hole, comprising the following steps of: providing a substrate; depositing a dielectric layer on the substrate; forming a photoresist pattern on the dielectric layer by using a photolithographic process; carrying out dry etching on the dielectric layer to expose the substrate by using the photoresist pattern as a mask, forming a through hole and peeling the photoresist pattern; depositing restoration layers on the surface of the dielectric layer and the side wall and the bottom of the through hole by using a PECVD (Plasma Enhanced Chemical Vapor Deposition) process; and removing partial restoration layers by using a back etching process so as to expose the substrate and form the connection hole. By adopting the method, the lack of the top of the side wall of the through hole is made up, the opening size of the connection hole is consistent with the process requirement and the demand of electric isolation is satisfied.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for making a connection hole. Background technique [0002] The production of connection holes is a common process in the back-end process of semiconductor devices. Connection holes, such as contact, can be used to form metal contacts in the active area of ​​semiconductor devices, and via can be used to achieve conduction between different metal layers. At present, with the improvement of the integration level of semiconductor integrated circuits, in order to reduce the size of the chip in the lateral direction, it is often necessary to form multiple (eg, six) metal wiring layers, and correspondingly, multiple connection holes need to be formed. [0003] The typical manufacturing method of the connection hole is: provide a substrate; deposit a dielectric layer on the substrate and planarize the dielectric layer; use a photolithography process to form ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/768
Inventor 邹立罗飞
Owner SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORP