Method for preparing amorphous silicon carbide film and epitaxial film at low temperature

Abstract

The invention discloses a method for preparing an amorphous silicon carbide film and an epitaxial film at low temperature, which comprises the steps of: selecting a proper substrate and a target material according to an application requirement, growing a silicon carbide film on the substrate; cleaning the surfaces of the substrate and the target material and then delivering to a vacuum growing cavity, evacuating the vacuum growing cavity by using a mechanical pump and a molecule pump; heating the substrate by using a heater; growing a silicon carbide film by using magnetic control sputtering or laser pulse, controlling the growing silicon carbide crystal form in a deposition process through controlling a deposition frequency; and annealing the substrata, and protecting by using gas when annealing. According to the invention, the growing temperature of the silicon carbide film is greatly reduced, the amorphous silicon carbide film or a preferred orientation crystal film with a 3C-SiC, 2H-SiC, 4H-SiC and 15R-SiC structure is prepared, and the method can be applied to the photoelectron and microelectronics field when a semiconductor element is manufactured.

Description

Technical field [0001] The invention relates to the field of preparation of semiconductor thin film materials, in particular to a growth technology for epitaxial growth of silicon carbide thin films. Background technique [0002] In the past two decades, although thyristors and diodes based on monocrystalline silicon technology have been widely used in power systems, they have encountered development bottlenecks in blocking voltage, switching frequency, higher efficiency and reliability. . [0003] Silicon material has an indirect band gap with a small band gap width. As a typical representative of wide band gap semiconductor materials, SiC has unparalleled electrical properties of silicon materials. It will replace silicon materials in the near future and be widely used in power electronic devices. In recent years, breakthroughs in SiC single crystal preparation technology have promoted the application and development of SiC devices. However, the high cost of single crystal mate...

AI Technical Summary

Problems solved by technology

This method is difficult to control complex growth parameters, and the consumption cost is high

[0008] In summary, there are still some technical problems in the preparation of SiC thin films, mainly including: the growth temperature is too high and impurities are easily introduced, and the doping of the substrate is redistributed; the lattice mismatch between the substrate and the SiC thin film causes a relatively low defect density. Large; it is difficult to effectively control the quality of the film layer, etc.

Images