Method for manufacturing complementary metal-oxide semiconductor (CMOS) image sensor
A technology of image sensor and manufacturing method, which is applied in semiconductor/solid-state device manufacturing, radiation control devices, electrical components, etc., can solve problems such as sunken damage of light-emitting diodes, and achieve the effect of avoiding leakage current
Active Publication Date: 2013-05-29
SEMICON MFG INT (SHANGHAI) CORP
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[0009] The invention provides a method for manufacturing a CMOS image sensor to solve the problem that the existing method for manufacturing a CMOS image sensor will form a recessed damage in the area used to form a light emitting diode
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[0024] According to the background technology, in the existing CMOS image sensor manufacturing method, in the process of etching the insulating material layer to form sidewalls by using the plasma etching process, the plasma will collide with the insulating material layer of the gate structure to change the direction of motion. The plasma that causes the changing direction of movement hits the region used to form the light-emitting diode on the semiconductor substrate, and forms a concave-type damage in the first doped region of the light-emitting diode. Therefore, the present invention proposes a method for etching Before etching the insulating material layer to form side walls, a sacrificial layer is formed on the area used to form the light emitting diode, which is used to protect the first doped area of the light emitting diode, even if there is plasma and the area used to form the light emitting diode on the semiconductor substrate occurs Collisions can only form defects...
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The invention provides a method for manufacturing a complementary metal-oxide semiconductor (CMOS) image sensor. The method comprises the following steps: providing a semiconductor substrate; forming a gate structure on the region for forming metal-oxide semiconductor (MOS) transistors of the semiconductor substrate; implanting first ions on the region for forming light-emitting diodes of the semiconductor substrate to form a first doped region with a doping type opposite to that of the semiconductor substrate; forming a sacrificial layer covering the semiconductor substrate; forming a photoresist pattern layer exposed out of the first doped region on the sacrificial layer; implanting second ions to form a covering layer on the surface of the first doped region, wherein the ion doping type of the covering layer is opposite to that of the first doped region; removing the photoresist pattern layer and the sacrificial layer in other positions except the covering layer; and forming spacers on the side walls of the gate structure. By the method, the light-emitting diodes are prevented from generating dark current, thus finally preventing the CMOS image sensor from generating leakage current.
Description
technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for manufacturing a CMOS image sensor. Background technique [0002] Complementary metal oxide (CMOS) image sensor (image sensor) chip is a semiconductor device that converts optical signals into electrical signals. In recent years, due to many advantages in circuit integration, energy consumption and manufacturing costs, CMOS image sensors have gained developed rapidly. The CMOS image sensor includes a series of pixel units (pixel cells) and peripheral circuits (periphery circuit), each pixel unit includes a light-emitting diode and at least one MOS transistor, so that each unit image is detected by the MOS transistor in the light-on mode. The light-emitting diode is used to absorb the incident light energy and convert the light energy into photocurrent. [0003] In the manufacturing process of the CMOS image sensor, the key is to reduce the dark current (da...
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IPC IPC(8): H01L21/82H01L27/146
Inventor 邹立罗飞
Owner SEMICON MFG INT (SHANGHAI) CORP