CMOS image sensor and method for fabricating the same
a technology of metal oxidesemiconductor and image sensor, which is applied in the direction of electrical equipment, semiconductor devices, radio frequency controlled devices, etc., can solve the problems of high power consumption, complicated process steps, and complicated driving modes, and achieve the effect of reducing the dark curren
Inactive Publication Date: 2008-08-28
DONGBU ELECTRONICS CO LTD
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Benefits of technology
The solution enhances color reproduction by optimizing the blue light sensitivity and reduces dark current, resulting in improved image resolution and color fidelity by using the epitaxial layer as the sensitive layer for blue light and preventing the N type region from adjoining the device isolation film.
Problems solved by technology
The CCD has drawbacks in that its driving mode is complicated, power consumption is high, and process steps are complicated due to many mask process steps.
In a related art pixel structure, a blue wavelength has a penetration depth of 0.3 μm and causes a difficulty in the color reproduction of images.
Thus, it is difficult to reproduce respective colors at a ratio of 1:1 in color reproduction using red, green, and blue colors.
The failure in obtaining an ideal ratio of 1:1:1 of the respective colors in color reproduction reduces color reproduction.
Method used
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[0026]Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings. Wherever possible, like reference designations will be used throughout the drawings to refer to the same or similar parts.
[0027]As shown in FIG. 5, illustrating a CMOS image sensor according to the present invention, a photodiode 100 is formed, and a power line layer 110 is formed on the photodiode 100. A gate poly 120 is connected between the power line layer 110 and a first metal layer 140. An interlayer dielectric film 130 is formed between the photodiode 100 and the first metal layer 140. The first metal layer 140 and a second metal layer 160 are sequentially deposited on the interlayer dielectric film 130. A first inter-metal dielectric layer 150 insulates the first metal layer 140 from the second metal layer 160. A second inter-metal dielectric layer 170 is formed on the second metal layer 160. The second inter-metal dielectric lay...
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A CMOS image sensor and a method for fabricating the same are provided, in which an N type region of a photodiode is prevented from adjoining a device isolation film and a dark current is reduced. The CMOS image sensor includes an interlayer dielectric film formed between a gate poly and a power line, a contact formed in the interlayer dielectric film, and an epitaxial layer connected with the contact and formed only in a blue photodiode region.
Description
[0001]This application claims the benefit of Korean Patent Application No. 10-2004-0116519, filed on Dec. 30, 2004, which is hereby incorporated by reference for all purposes as if fully set forth herein.BACKGROUND OF THE INVENTION[0002]1. Field of the Invention[0003]The present invention relates to complementary metal-oxide-semiconductor (CMOS) image sensors, and more particularly, to a CMOS image sensor and a method for fabricating the same, which improves color reproduction by preventing an N type region of a photodiode from adjoining a device isolation film. The CMOS image sensor and the method for fabricating the same also reduces dark current.[0004]2. Discussion of the Related Art[0005]An image sensor is a semiconductor device that converts optical images to electrical signals. The image sensor is classified into a charge-coupled device (CCD) and a CMOS image sensor. The CCD stores charge carriers in MOS capacitors and transfers the charge carriers to the MOS capacitors. The M...
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IPC IPC(8): H01L27/146
CPCH01L27/14603H01L27/14609H01L27/14687H01L27/14627H01L27/14621H01L27/146H01L31/10
Inventor HAN, CHANG HUN
Owner DONGBU ELECTRONICS CO LTD