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Driving time sequence implementation method of frame transfer CCD (Charge Coupled Device) short exposure time

A technology for driving timing and implementing methods, which is applied in the field of photoelectric detection to achieve the effect of short exposure time

Inactive Publication Date: 2012-04-11
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In order to solve the problem in the prior art that the ordinary frame transfer CCD cannot realize or needs to use a mechanical shutter to realize the short exposure time shorter than the frame readout time, the present invention provides a driving sequence realization method of the frame transfer CCD short exposure time

Method used

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  • Driving time sequence implementation method of frame transfer CCD (Charge Coupled Device) short exposure time
  • Driving time sequence implementation method of frame transfer CCD (Charge Coupled Device) short exposure time
  • Driving time sequence implementation method of frame transfer CCD (Charge Coupled Device) short exposure time

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Embodiment Construction

[0020] The present invention will be described in further detail below through the accompanying drawings and specific embodiments, but the protection scope of the present invention should not be limited thereto.

[0021] Such as figure 2 As shown, the driving timing control flow of the CCD57-10 type frame transfer CCD to realize a charge dumping is as follows:

[0022] 1) Control the row transfer clocks ccd_st1, ccd_st2 and ccd_st3 to vertically transfer the charge in the storage area to the horizontal readout register by one row; the horizontal readout clocks ccd_r1, ccd_r2 and ccd_r3 keep high level, high level and low level respectively; The reset clock ccd_rst keeps high level; the charge dumping gate clock ccd_dg is initially low level, and becomes high level after 18μs;

[0023] 2) Repeat step 1) to dump a total of 528 rows of charges, during which the charge dumping gate clock ccd_dg is always kept at a high level;

[0024] 3) The row transfer clocks ccd_st1, ccd_st2...

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Abstract

The invention relates to a driving time sequence implementation method of frame transfer CCD (Charge Coupled Device) short exposure time, belonging to the technical field of photoelectric detection. The method comprises the following steps: (1) carrying out frame transfer-charge dumping operation for many times; (2) carrying out idle exposure; (3) carrying out frame transfer; and (4) reading out frames. The invention realizes the short exposure time which is one order of magnitude smaller than the frame reading-out time by introducing the charge quick transfer-dumping operation for many timesin the driving time sequence control flow without using mechanical shutters or modifying hardware circuit design. The transfer-dumping operation is carried out for many times, thereby ensuring that the charges accumulated by the exposure of the previous frame are thoroughly dumped out to avoid the data error caused by the residues of the charges in the current frame image.

Description

technical field [0001] The invention belongs to the technical field of photoelectric detection, and relates to a method for realizing driving timing of a frame transfer CCD with a short exposure time shorter than the frame readout time. Background technique [0002] The frame transfer CCD is composed of three parts: imaging area, storage area and horizontal readout register. A common driving sequence includes three stages in a frame cycle: frame transfer, frame readout, and idle exposure. In the frame transfer stage, the charges accumulated in the exposure of the imaging area are quickly transferred to the storage area by controlling the frame transfer clock signal, then the storage area and the horizontal readout register enter the frame readout state, and the imaging area enters the exposure state again until the next A frame transfer. In the frame readout stage, first control the row transfer clock signal to transfer a row of charges to the horizontal readout register, ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H04N5/335H04N5/341H04N5/357H04N25/00
Inventor 马庆军宋克非张佩杰
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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