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Solid-state image pickup device

A technology of solid-state imaging devices and pixel units, applied in radiation control devices, image communications, televisions, etc., to achieve high-resolution effects

Active Publication Date: 2013-10-09
HAMAMATSU PHOTONICS KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, sometimes only one solid-state imaging device can be manufactured from one semiconductor wafer

Method used

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Embodiment Construction

[0035] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In addition, in the description of the drawings, the same reference numerals are attached to the same elements, and overlapping descriptions are omitted.

[0036] figure 1 It is a schematic configuration diagram of the solid-state imaging device 1 according to the present embodiment. The solid-state imaging device 1 according to the present embodiment includes a light receiving unit 10 , a signal readout unit 20 , a control unit 30 , and a correction processing unit 40 . In addition, when used as an X-ray flat panel, a scintillator panel is laminated on the light receiving surface 10 of the solid-state imaging device 1 .

[0037] The light receiving unit 10 is two-dimensionally arranged with M×N pixel units P 1，1 ~P M，N , the pixel portion P 1，1 ~P M，N Arranged in M ​​rows and N columns. Pixel part P m，n Located at row m and column n. Here, M and N are ...

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Abstract

A solid-state image pickup device 1 includes a photodetecting section 10, a signal readout section 20, a controlling section 30, and a correction processing section 40. In the photodetecting section 10, M×N pixel units P 1,1 to P M,N each including a photodiode that generates charge of an amount according to an incident light intensity and a readout switch connected to the photodiode are two-dimensionally arrayed in M rows and N columns. A charge generated in each pixel unit P m,n is input to an integration circuit S n through a readout wiring line L O,n , and a voltage value output from the integration circuit S n according to the charge amount is output to an output wiring line L out through a holding circuit H n . In the correction processing section 40, a correction processing is applied to respective frame data output from the signal readout section 20, and the frame data after the correction processing is output. Accordingly, a solid-state image pickup device that allows acquiring a high-resolution image by correcting pixel data when any readout wiring line is disconnected is realized.

Description

technical field [0001] The present invention relates to a solid-state imaging device. Background technique [0002] As a solid-state imaging device, a device using CMOS technology is known, and among them, a passive pixel sensor (PPS: Passive Pixel Sensor) system is known (see Patent Document 1). The solid-state imaging device of the PPS method is: PPS-type pixel sections including photodiodes that generate charges corresponding to the intensity of incident light are two-dimensionally arranged in M ​​rows and N columns, and each pixel section generates a charge corresponding to the incident light intensity. The charge in the photodiode is stored in the capacitive element in the integration circuit, and the device outputs a voltage value corresponding to the stored charge. [0003] In general, the output terminals of the M pixel units in each column are connected to the input terminals of the integrating circuit provided corresponding to the column via the readout wiring pro...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H04N5/3745H04N5/361H04N25/00A61B6/03
CPCH04N5/367H04N5/378H04N25/68H04N25/78H01L27/146H04N25/77H04N25/75
Inventor 久嶋龙次藤田一树泽田纯一
Owner HAMAMATSU PHOTONICS KK