Radio-frequency parameter simulation method for multi-unit radio-frequency transistor
A technology of radio frequency transistors and radio frequency parameters, which is applied in the direction of electrical digital data processing, special data processing applications, instruments, etc., can solve the problems of large working current of multi-unit radio frequency transistors, large human resources, radio frequency test restrictions, etc., to save layout work , reduce human resources, improve the effect of flexibility
Active Publication Date: 2011-05-18
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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Problems solved by technology
The above methods have many disadvantages, such as: the layout structure design of multi-cell RF transistors not only requires a lot of human resources, but also cannot cover various high-power RF integrated circuit applications
At the same time, the working current of multi-unit RF transistors is very large, and its RF testing is also limited by existing testing equipment
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[0012] The multi-unit RF transistor structure used in the design of RF integrated circuits is as follows: figure 1 As shown, the multi-unit radio frequency transistor structure mainly includes two parts, one part is a plurality of radio frequency transistor units 11 repeatedly connected in parallel, and the other part is the interconnection 12 between the plurality of radio frequency transistor units.
[0013] An embodiment of the radio frequency parameter simulation method of the multi-unit radio frequency transistor of the present invention is as follows figure 2 shown, including the following steps:
[0014] 1. First design the layout structure of each single RF transistor unit for repeated parallel connection in the general structure of the multi-unit RF transistor, and perform RF testing on the layout structure of each single RF transistor unit to obtain the RF of the layout structure of each single RF transistor unit. Parameter S_singlecell_i (i=1,..., m, m is the numb...
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The invention discloses a radio-frequency parameter simulation method for a multi-unit radio-frequency transistor. The method comprises the following steps of: designing layout structures for repeatedly connecting single radio-frequency transistor units in parallel in the total structure of the multi-unit radio-frequency transistor, and performing radio-frequency test on the layout structures to obtain radio-frequency parameters of the layout structures of the single radio-frequency transistor units; calling layout files of mutual connecting line structures among a plurality of radio-frequency transistor units of the multi-unit radio-frequency transistor in electromagnetic simulation software, and performing electromagnetic simulation to obtain radio-frequency parameters of the mutual connecting line structures; and superposing the radio-frequency parameters of the mutual connecting line structures among the plurality of radio-frequency transistor units and the radio-frequency parameters of the layout structures of the single radio-frequency transistor units to obtain radio-frequency parameters of the total structure of the multi-unit radio-frequency transistor. The radio-frequency parameter simulation method for the multi-unit radio-frequency transistor can reduce manpower resources for radio-frequency parameter simulation, and can flexibly and conveniently simulate the radio-frequency parameters of the multi-unit radio-frequency transistor.
Description
technical field [0001] The invention relates to semiconductor testing technology, in particular to a method for simulating radio frequency parameters of multi-unit radio frequency transistors. Background technique [0002] In the design of radio frequency integrated circuits, due to the application requirements of high current and high power, the design of active devices mostly adopts the multi-unit radio frequency transistor structure, such as figure 1 As shown, the multi-unit radio frequency transistor structure actually includes two parts, one part is the repeated parallel connection of radio frequency transistor units 11 , and the other part is the interconnection 12 between multiple radio frequency transistor units. In order to perform accurate radio frequency parameter simulation on the multi-unit radio frequency transistor structure, the traditional method is to pre-design the layout structure of the multi-unit radio frequency transistor, and then directly conduct rad...
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Inventor 周天舒
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP