Radio-frequency parameter simulation method for multi-unit radio-frequency transistor
A technology of RF transistors and RF parameters, applied in electrical digital data processing, special data processing applications, instruments, etc., can solve the problems of large working current of multi-unit RF transistors, large human resources, RF test limitations, etc., to save layout work , the effect of reducing human resources and improving flexibility
Active Publication Date: 2012-07-11
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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Problems solved by technology
The above methods have many disadvantages, such as: the layout structure design of multi-cell RF transistors not only requires a lot of human resources, but also cannot cover various high-power RF integrated circuit applications
At the same time, the working current of multi-unit RF transistors is very large, and its RF testing is also limited by existing testing equipment
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[0012] The structure of multi-unit RF transistors used in the design of RF integrated circuits such as figure 1 As shown, the multi-unit RF transistor structure mainly includes two parts, one part is multiple RF transistor units 11 repeatedly connected in parallel, and the other part is interconnection 12 between multiple RF transistor units.
[0013] An embodiment of the radio frequency parameter simulation method of the multi-unit radio frequency transistor of the present invention is as follows: figure 2 As shown, including the following steps:
[0014] 1. First design the layout structure of each single RF transistor unit used for repeated parallel connection in the overall structure of multi-unit RF transistors, and perform RF test on the layout structure of each single RF transistor unit to obtain the RF of the layout structure of each single RF transistor unit Parameter S_singlecell_i (i=1,...,m, m is the number of multiple RF transistor units repeatedly connected in parall...
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The invention discloses a radio-frequency parameter simulation method for a multi-unit radio-frequency transistor. The method comprises the following steps of: designing layout structures for repeatedly connecting single radio-frequency transistor units in parallel in the total structure of the multi-unit radio-frequency transistor, and performing radio-frequency test on the layout structures to obtain radio-frequency parameters of the layout structures of the single radio-frequency transistor units; calling layout files of mutual connecting line structures among a plurality of radio-frequency transistor units of the multi-unit radio-frequency transistor in electromagnetic simulation software, and performing electromagnetic simulation to obtain radio-frequency parameters of the mutual connecting line structures; and superposing the radio-frequency parameters of the mutual connecting line structures among the plurality of radio-frequency transistor units and the radio-frequency parameters of the layout structures of the single radio-frequency transistor units to obtain radio-frequency parameters of the total structure of the multi-unit radio-frequency transistor. The radio-frequency parameter simulation method for the multi-unit radio-frequency transistor can reduce manpower resources for radio-frequency parameter simulation, and can flexibly and conveniently simulate the radio-frequency parameters of the multi-unit radio-frequency transistor.
Description
Technical field [0001] The invention relates to semiconductor testing technology, in particular to a method for simulating radio frequency parameters of multi-unit radio frequency transistors. Background technique [0002] In the design of radio frequency integrated circuits, due to the application requirements of high current and high power, the design of active devices mostly adopts multi-unit radio frequency transistor structures, such as figure 1 As shown, the multi-unit RF transistor structure actually includes two parts, one part is the RF transistor unit 11 repeatedly connected in parallel, and the other part is the interconnection 12 between multiple RF transistor units. In order to perform accurate radio frequency parameter simulation on the structure of the multi-unit radio frequency transistor, the traditional method is to design the layout structure of the multi unit radio frequency transistor in advance, and then directly carry out the radio frequency test and the rad...
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IPC IPC(8): G06F17/50
Inventor 周天舒
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP