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Heat transfer device having at least one semiconductor element, and method for the assembly thereof

A technology in the direction of semiconductor and heat transfer, applied in semiconductor laser devices, semiconductor lasers, electrical components, etc., can solve the problems of time-wasting selection and distribution, expensive manufacturing technology, etc.

Active Publication Date: 2012-09-05
JENOPTIK LASER
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] For this and similar arrangements, there is the problem that the highly thermally conductive intermediate element arranged between the heat transfer parts of the heat conductor should preferably have the same thickness as the laser diode bar between its two sides, the highly thermally conductive intermediate The two sides of the element are connected by the heat-absorbing part of the heat-conducting body for heat dissipation, so that on the one hand, the thickness of the junction area between the laser rod and the heat-absorbing part of the heat-conducting body and on the other hand, the The land thickness, which can on the one hand remain the same and on the other hand remain constant over the entire extent of each land
Repeatable matching of laser diode bars and intermediate elements with a thickness difference of less than 2 μm is either technically expensive to manufacture or accompanied by time-consuming selection and distribution processes

Method used

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  • Heat transfer device having at least one semiconductor element, and method for the assembly thereof
  • Heat transfer device having at least one semiconductor element, and method for the assembly thereof
  • Heat transfer device having at least one semiconductor element, and method for the assembly thereof

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Embodiment 1

[0039] The components used to manufacture the first variant of the first embodiment of the heat transfer device according to the invention are in Figure 1a It is shown in : the laser diode bar 10 has a first epitaxial-side contact surface 11 for electrical contact and a second substrate-side contact surface 12 opposite the epitaxial-side contact surface. The laser diode bar resonator length is 2mm. Light emissions that occur during operation are indicated by arrows 15 arranged on the optical axis. An aluminum nitride ceramic plate 40 with a thickness of 100 μm is disposed behind the laser diode bar with a thickness of 120 μm in the opposite direction of light emission. It has metallized heat transfer surfaces 41 and 42 arranged opposite the epitaxial side and the substrate side.

[0040] The first epitaxial side plate-shaped heat conductor 20 is mainly composed of diamond-silver composite material and has a heat entering surface 21 opposite to the epitaxial side contact surf...

Embodiment 2

[0058]Contrary to the first embodiment, the second embodiment does not apply the flat plate 40 introduced between the heat conductors for electrical insulation. Alternatively, a land with an electrically insulating agent is used for the electrically insulating connection of the heat conductor. To this end, at least one of the heat conductors 20, 30 (in the present embodiment both heat conductors 20 and 20) has a bulge in the region of the heat transfer parts 26, 36, which in the adhesively bonded heat transfer device The center extension is aligned to the rear of the laser diode bar 10, ie between the two contact surface planes. Thus, the heat inlet surfaces 21 , 31 of the heat absorbing parts 25 , 35 lie together with the supporting surfaces 23 , 33 of the respective supporting parts 27 , 37 in a common plane, partly positioned parallel to the heat transfer part 26 . , 36 in the plane of the heat transfer surface 22,32.

[0059] Unlike the first embodiment, the second embod...

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Abstract

The invention relates, among other things, to a method for the assembly of a semiconductor component, wherein the semiconductor component on mutually opposing sides is joined in a first and a second bonded connection with a heat-conducting body each. For this purpose, the heat-conducting bodies are joined in a third bonded connection in the region of the sections thereof extending away from the semiconductor element, wherein a spacer, which with regard to the third connection is disposed on the opposite side of the semiconductor component between the heat-conducting bodies, in conjunction with the requirement that the joining zone thickness of the third connection is greater than that of the first or the second joining zone, ensures that defined joining zone thicknesses in the bonded connection are maintained during the joining process. The third connection is used for the at least partial heat transfer of the waste heat of the semiconductor component, particularly to a heat sink thatis connected to the heat transfer device produced according to the invention.

Description

[0001] This patent application claims priority from German patent application 10 2008 026 801.1, the disclosure of which is hereby incorporated by reference into the present application. technical field [0002] The invention relates to a heat transfer device with the preamble according to claim 1 , which has at least one semiconductor component, in particular a laser or light-emitting diode component, and to a method for assembling it. Background technique [0003] In order to reduce the thermal resistance of the heat transfer means supporting the cooling of the laser diode bar, eg patent and unexamined patent applications US 5,325,384, WO 2006 098 897 A1 and WO 2007 082 508 A1 are known for attaching heat conductors to opposite sides of the laser bar. If the heat conductors have different heat removal capabilities, for example because the heat sinks connected to the heat conductors have significantly different thermal resistances, the heat transfer can be reduced by thermal...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/024H01S5/40
CPCH01S5/02272H01S5/024H01S5/4025H01S5/02264H01S5/02484H01S5/02365H01S5/0237
Inventor 马提亚·施罗德德克·洛伦岑
Owner JENOPTIK LASER