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Thin film transistor

一种薄膜晶体管、晶体的技术，应用在晶体管、电固体器件、半导体器件等方向

Inactive Publication Date: 2011-05-25
SEMICON ENERGY LAB CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0014] However, the technology capable of producing thin film transistors capable of high-speed operation with high productivity on a large-area mother glass substrate such as the 10th generation (2950mm×3400mm) has not yet been established, which has become a problem in the industry

Method used

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Examples

Experimental program
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Effect test

Embodiment 1

[0095] In this embodiment, an example of a form of a thin film transistor will be described with reference to the drawings.

[0096] Figure 1A and 1B A cross-sectional view showing a thin film transistor according to this embodiment. Figure 1A The illustrated thin film transistor has a gate electrode layer 103 on a substrate 101, a gate insulating layer 107 covering the gate electrode layer 103, a semiconductor layer 115 in contact with the gate insulating layer 107 and serving as a channel formation region, and a semiconductor layer 115 on the semiconductor layer 115. The buffer layer 131, and the source region and the drain region 129 disposed on the buffer layer 131 and in contact with a part thereof. In addition, the thin film transistor further has wiring layers 123 and 125 provided on and in contact with the source region and the drain region 129 . The wiring layers 123 and 125 constitute source electrodes and drain electrodes. In addition, each layer is patterned in...

Embodiment 2

[0194] In this example, reference will be made to Figure 9 to Figure 10B A mode usable for the semiconductor layer 115 in the thin film transistor shown in Embodiment 1 will be described.

[0195] In the thin film transistor described in this embodiment, dispersed microcrystalline semiconductor particles or network-shaped microcrystalline semiconductor 118 are formed on the gate insulating layer 107 (refer to Figure 9 ).

[0196] Figure 10A The shown dispersed microcrystalline semiconductor particles 118a or Figure 10B The shown network microcrystalline semiconductor 118b can use silicon or silicon germanium (Si germanium) whose content of silicon is more than that of germanium. X Ge 1-X , 0.5 Figure 10A The shape of the dispersed microcrystalline semiconductor particles 118a shown is circular, while as Figure 9 The cross-sectional shape shown is hemispherical. When the diameter of dispersed microcrystalline semiconductor particles is set to be 1nm to 30nm when view...

Embodiment 3

[0203] In this Example 3, reference will be made to Figure 11 The semiconductor layer 115 in Embodiment 1 is described as a thin film transistor formed by using a semiconductor layer having a crystalline region in an amorphous structure, that is, a thin film transistor having a crystalline region in an amorphous structure is formed between the gate insulating layer and the source region and the drain region. semiconductor layer of thin film transistors.

[0204] Figure 11 is a cross-sectional view of the thin film transistor according to the present embodiment. Figure 11 The shown thin film transistor comprises: a gate electrode layer 103 on a substrate 101; a gate insulating layer 107 covering the gate electrode layer 103; a semiconductor layer 132 disposed on and in contact with the gate insulating layer 107; A portion of 132 contacts the source and drain regions 129 . In addition, the thin film transistor includes wiring layers 123 and 125 disposed on and in contact w...

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PUM

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Abstract

A thin film transistor includes, as a buffer layer, a semiconductor layer which contains nitrogen and includes crystal regions in an amorphous structure between a gate insulating layer and source and drain regions, at least on the source and drain regions side. As compared to a thin film transistor in which an amorphous semiconductor is included in a channel formation region, on-current of a thin film transistor can be increased. In addition, as compared to a thin film transistor in which a microcrystalline semiconductor is included in a channel formation region, off-current of a thin film transistor can be reduced.

Description

technical field [0001] The present invention relates to a thin film transistor, a manufacturing method thereof, a semiconductor device and a display device using the thin film transistor. Background technique [0002] As one type of field effect transistor, there is known a thin film transistor in which a channel formation region is formed in a semiconductor layer formed on a substrate having an insulating surface. Technologies using amorphous silicon, microcrystalline silicon, and polycrystalline silicon as semiconductor layers for thin film transistors have been disclosed (see Patent Documents 1 to 5). A typical application of a thin film transistor is a liquid crystal television device, and the thin film transistor has been put into practical use as a switching transistor for each pixel included in a display. [0003] [references] [0004] [Patent Document] [0005] [Patent Document 1] Japanese Published Patent Application No. 2001-053283 [0006] [Patent Document 2] ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/786H01L21/336
CPCH01L29/78696H01L27/1288H01L29/04H01L29/66765H01L27/1214H01L29/78678
Inventor 伊佐敏行神保安弘手塚祐朗大力浩二宫入秀和山崎舜平广桥拓也
Owner SEMICON ENERGY LAB CO LTD
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