Developing cavity and developing machine base

Abstract

The invention discloses a developing cavity and a developing machine base and relates to a technology for manufacturing a semiconductor chip. The developing cavity comprises a cavity body (201), a flushing pipeline (202) arranged in the cavity body, a developing solution pipeline (203) and a slide glass table (204), wherein the developing solution pipeline (203) has a diameter greater than 0.0625 inch, and a developing solution outlet of the developing solution pipeline (203) is formed above the slide glass table (204) and is vertical to the slide glass table (204). By increasing the diameter of a developing solution pipeline in the developing cavity and modifying the position of the developing solution outlet of the developing solution pipeline to be vertical to the slide glass table, the developing solution can be uniformly accumulated on a silicon chip in a shorter time; therefore, the developing effects of a series of small scale integration (SSI) series machine bases are optimized.

Description

technical field [0001] The invention relates to the manufacturing technology of semiconductor chips, in particular to a developing chamber and a developing machine used in the manufacturing process of semiconductor chips. Background technique [0002] In the manufacturing process of semiconductor chips, after the silicon wafer is glued and exposed, the graphics on the silicon wafer need to be developed by a developing machine. The developing ability of the developing machine directly affects the uniformity of the line width of the graphics in the silicon wafer and the number of defects. how much. [0003] The SSI machine is a rubber developing machine produced by semiconductor systems lnc. in the 1980s and 1990s. Due to the limited capacity of the machine, it is only suitable for the process of large line width. For a process with a small line width, the uniformity of the line width is poor, and the number of defects is also large. [0004] The structure of the developing ...

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Problems solved by technology

[0007] The inventors of the present invention have found that because the diameter of the developing pipeline is too small, when the pressure of the developing solution is small, the flow rate of the developing solution is small, and the angle between the ejected liquid column and the silicon wafer is greater than 45 degrees due to gravity. , the developer cannot evenly cover the entire silicon wafer, resulting in the failure to develop in some areas of the silicon wafer, or the development effect is very poor. Although the developer is sprayed for a long enough time to achieve complete development, the spraying time If it is too long, the line width of the entire silicon wafer will be uneven; when the pressure of the developer is high, due to the impact force, the developer will be easily thrown out of the silicon wafer and cannot accumulate on the silicon wafer, so that it cannot be developed.

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