High-voltage vertical structure semiconductor light emitting diode

Abstract

The invention relates to a high-voltage vertical structure semiconductor light emitting diode (LED). A high-voltage vertical structure LED chip comprises a supporting substrate and a plurality of vertical structure LED units, wherein the vertical structure LED units are arranged on the insulated supporting substrate with a through hole and are electrically connected serially; and each vertical structure LED unit comprises: (A) a semiconductor epitaxial film, (B) a passivation layer and (C) a metal electrode, wherein the semiconductor epitaxial film is arranged on a metal film of the insulatedsupporting substrate with the through hole; the passivation layer covers the insulated supporting substrate with the through hole, the metal film and the semiconductor epitaxial film; a window is formed at a preset position on the passivation layer on the semiconductor epitaxial film; a window is formed at a preset position on the passivation layer on the metal film; and the metal electrode is stacked on the semiconductor epitaxial film through the window, extends towards the metal film of the preset adjacent vertical structure LED unit and is electrically connected with the metal film through the window on the metal film of the adjacent vertical structure LED unit; therefore, two adjacent vertical structure LED units are electrically connected serially.

Description

technical field [0001] The invention discloses a high-voltage vertical structure semiconductor light-emitting diode (HV Vertical LED), which belongs to the field of optoelectronic technology. Background technique [0002] Semiconductor light-emitting diodes (LEDs) are entering the field of general lighting, and high-voltage-driven LED chips have been introduced to the market. However, each LED unit in existing high-voltage semiconductor light emitting diodes has a lateral structure. The disadvantage of the lateral structure LED unit is that it cannot be driven by a large current, low luminous efficiency, current crowding, large thermal resistance, etc. Therefore, a high-voltage semiconductor light-emitting diode is required, which can be driven by a large current and further improve the luminescence. efficiency and improved heat dissipation. [0003] The present invention discloses a high-voltage vertical structure LED chip to overcome the above disadvantages. Contents o...

AI Technical Summary

Problems solved by technology

However, each LED unit in existing high-voltage semiconductor light-emitting diodes has a lateral structure

The disadvantage of the lateral structure LED unit is that it cannot be driven by a large current, low luminous efficiency, current crowding, large thermal resistance, etc. Therefore, a high-voltage semiconductor light-emitting diode is required, which can be driven by a large current and further improve the luminescence. efficiency and improved thermal

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