Method for manufacturing semiconductor device
A manufacturing method, semiconductor technology, applied in the direction of semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve the problems of semiconductor substrate surface etching, residue, difficult to use photolithography technology, etc., to achieve easy processing , The effect of improving the degree of freedom in shape design
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
no. 1 Embodiment approach
[0053] figure 1 It is a diagram showing the semiconductor device 1 manufactured by the method of manufacturing the semiconductor device according to the first embodiment of the present invention, and is a cross-sectional view viewed from a cross-section along the thickness direction thereof.
[0054] The semiconductor device 1 is roughly composed of the figure 1 A semiconductor substrate 2 with an insulating layer 3 formed on the lower surface of the paper, a functional element 4 and a plurality of electrode pads 5 arranged on one side 2 a of the semiconductor substrate 2 with the insulating layer 3 interposed therebetween, and these functional elements 4 and a plurality of wiring portions 6 electrically connected to each electrode pad 5 .
[0055] A plurality of through-holes 7 widening from one side 2 a to the other side 2 b of the semiconductor substrate 2 are formed in the semiconductor substrate 2 , and the electrode pads 5 are respectively exposed in the through-holes...
no. 2 Embodiment approach
[0104] use Figures 8A-9C , the second embodiment of the manufacturing method of the semiconductor device of the present invention will be described below. Among them, the configuration of the semiconductor device manufactured by the manufacturing method of the semiconductor device of this embodiment, and the use of figure 1 The configuration of the semiconductor device 1 according to the first embodiment described above is substantially the same. Therefore, in the following description, the same reference numerals are assigned to the same constituent elements as those described in the above-mentioned first embodiment, and their repeated descriptions are omitted. Next, each step in this embodiment will be described in order.
[0105] (Electrode Formation Process)
[0106] First, electrode pads 5 are formed on one surface of the semiconductor substrate 2 . That is, if Figure 8A As shown, a semiconductor substrate 2 on which functional elements 4 are formed via an insulat...
no. 3 Embodiment approach
[0128] use Figures 10A to 12C , the third embodiment of the manufacturing method of the semiconductor device of the present invention will be described below. Due to the configuration of the semiconductor device manufactured by the manufacturing method of the semiconductor device of this embodiment, and the use of figure 1 The configuration of the semiconductor device 1 according to the first embodiment described above is different, so the description will focus on the difference. Here, the same reference numerals are assigned to the same components as those of the semiconductor device 1 of the first embodiment, and their repeated descriptions are omitted.
[0129] Such as Figure 10A and Figure 10B As shown, the semiconductor device 50 of the present embodiment differs particularly in the following points: the functional element 4 is formed in a state embedded in one surface of the semiconductor substrate 2 (the surface on the lower side of the paper in the drawing); T...
PUM
Login to View More Abstract
Description
Claims
Application Information
Login to View More