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Cryogenic treatment method and device for steel wire for cutting solar cell silicon chip

A solar cell, cryogenic treatment technology, applied in heat treatment furnaces, heat treatment equipment, furnaces, etc., can solve the problems of steel wire strength and wear resistance limitations, low complete transformation temperature, etc.

Active Publication Date: 2012-09-19
YINGLI ENERGY CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since the complete transformation temperature of martensite is relatively low, around -190°, the strength and wear resistance of steel wires treated by existing heat treatment methods are greatly limited.

Method used

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  • Cryogenic treatment method and device for steel wire for cutting solar cell silicon chip
  • Cryogenic treatment method and device for steel wire for cutting solar cell silicon chip
  • Cryogenic treatment method and device for steel wire for cutting solar cell silicon chip

Examples

Experimental program
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Effect test

Embodiment 1

[0044] The steel wire material is W18Cr4V, the diameter is Φ0.1mm, and the heating treatment process is as follows:

[0045] a) Cool the steel wire from room temperature at a rate of 0.5°C / min to -196°C for the first time for 1 hour;

[0046] b) Raise the temperature of the steel wire after the first heat preservation to 110°C at a rate of 0.6°C / min for a second heat preservation of 1.5h;

[0047] c) Cool the steel wire after the second heat preservation to -192°C ~ -196°C at a rate of 0.5°C / min for a third heat preservation of 1.2h;

[0048] d) Warm up the steel wire after the third heat preservation to room temperature at a rate of 0.5°C / min.

[0049] Use steel wire after cryogenic treatment to cut silicon wafers, cutting 120m 2 After breaking, compared with the steel wire without cryogenic treatment, the cutting area is increased by 25%.

Embodiment 2

[0051] The steel wire material is W18Cr4VCo5, ​​the diameter is Φ0.1mm, and the cryogenic treatment process is as follows:

[0052] a) Cool the steel wire from room temperature at a rate of 0.5°C / min to -194°C for 0.8h for the first time;

[0053] b) Raise the temperature of the steel wire after the first heat preservation to 110°C at a rate of 0.8°C / min for a second heat preservation of 1.5h;

[0054] c) Lower the temperature of the steel wire after the second heat preservation to -192°C ~ -196°C at a rate of 0.7°C / min for a third heat preservation of 1.5h;

[0055] d) The steel wire after the third heat preservation is raised to room temperature at a rate of 0.6°C / min.

[0056] Use steel wire after cryogenic treatment to cut silicon wafers, cutting 110m 2 After breaking, compared with the steel wire without cryogenic treatment, the cutting area is increased by 22%.

Embodiment 3

[0058] The steel wire material is W18Cr4V2Co8, the diameter is Φ0.1mm, and the cryogenic treatment process is as follows:

[0059] a) Cool the steel wire from room temperature at a rate of 0.7°C / min to -196°C for 1.5 hours for the first time;

[0060] b) Raise the temperature of the steel wire after the first heat preservation to 110°C at a rate of 0.6°C / min for a second heat preservation of 1.5h;

[0061] c) Lower the temperature of the steel wire after the second heat preservation to -194°C to -196°C at a rate of 0.5°C / min for a third heat preservation of 1.6h;

[0062] d) The steel wire after the third heat preservation is raised to room temperature at a rate of 0.7°C / min.

[0063] Use steel wire after cryogenic treatment to cut silicon wafers, cutting 128m 2 After breaking, compared with the steel wire without cryogenic treatment, the cutting area is increased by 28%.

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Abstract

The invention provides a cryogenic treatment method for a steel wire for cutting a solar cell silicon chip. The method comprises the following steps of: (a) lowering the temperature of the steel wire from a first ambient temperature to 192 DEG C below zero to 196 DEG C below zero for first heat preservation; (b) raising the temperature of the steel wire to 100-120 DEG C after the first heat preservation for second heat preservation; (c) lowering the temperature of the steel wire to 192 DEG C below zero to 196 DEG C below zero after the second heat preservation, for third heat preservation; and (d) raising the temperature of the steel wire subjected to the third heat preservation to room temperature. Compared with the prior art, the invention has the advantages that: after cryogenic treatment is performed on the steel wire twice, a part of residual austenite structure in the steel wire can be transformed into a martensitic structure and the phenomena of structural defect and stress concentration in the steel wire are reduced, so that the intensity, toughness and wear resistance of the steel wire are enhanced and the cutting service life of the steel wire is finally prolonged.

Description

technical field [0001] The invention relates to metal heat treatment, in particular to a heat treatment method for steel wires used for cutting silicon wafers of solar cells. Background technique [0002] A solar cell, also known as a photovoltaic cell, is a device that directly converts light energy into electrical energy through the photoelectric effect. Silicon wafers are the core components of solar cells and are also the most expensive components in solar cells. Therefore, reducing the manufacturing cost of silicon wafers is one of the most effective means to control the cost of solar cells. [0003] The manufacturing process of silicon wafers mainly includes two processes of manufacturing silicon blocks and cutting silicon wafers by using silicon blocks. Manufacturing silicon blocks is the process of obtaining silicon blocks with a purity that meets the requirements of photovoltaic cells after undergoing multiple purification processes from polycrystalline silicon or m...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C21D6/04C21D9/52
Inventor 王士元甄云云陈敬欣
Owner YINGLI ENERGY CHINA