Spin valve structure with electric field-adjustable magnetoresistance and preparation process thereof

A technology of electric field adjustment and preparation process, applied in the field of magnetic storage, which can solve the problems of low impedance value, large leakage conductance, and can only be observed at lower temperatures

Active Publication Date: 2013-04-03
UNIV OF SCI & TECH BEIJING
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] BiFeO 3 It is the only material that has been confirmed to have room temperature multiferroicity, antiferromagnetic order (Neel temperature is 380°C) and ferroelectric order (Curie temperature is 810°C) at room temperature [Wang J., Neaton J.B., Zheng H., Nagarajan V., Ogale S.B., Liu B., Viehland D., Vaithyanathan V., Schlom D.G., Waghmare U.V., Spaldin N.A., Rabe K.M, Wuttig M, and Ramesh R., Science 299, 1719 (2003)] , but the large leakage conductance and low impedance of BFO at room temperature make it only possible to observe the magnetoelectric effect at lower temperatures

Method used

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  • Spin valve structure with electric field-adjustable magnetoresistance and preparation process thereof
  • Spin valve structure with electric field-adjustable magnetoresistance and preparation process thereof
  • Spin valve structure with electric field-adjustable magnetoresistance and preparation process thereof

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Embodiment Construction

[0029] Based on the above structure, the applicant has grown a new spin valve structure using laser pulse deposition and magnetron sputtering systems:

[0030] Sample 1: BiFeO with multiferroic material 3 The antiferromagnetic layer is deposited on the substrate by laser pulse deposition, and then the spin valve is grown in situ by magnetron sputtering. The detailed preparation process of the above structure is: using Pt(111) / Ti / SiO 2 / Si substrate, Pt layer as the bottom electrode, the size is 10*10 (mm 2 ); Laser pulse deposition to grow a multiferroic antiferromagnetic layer, the laser energy is 300mJ, the frequency is 5Hz, the oxygen (99.99%) pressure during deposition is 0.8-10Pa, the temperature is 650-750℃, and the annealing oxygen pressure is 20-300Pa , The annealing time is 30 minutes; the magnetron sputtering growth spin valve structure, the background vacuum of the sputtering chamber is 2×10 -5 Pa, the pressure of argon gas (99.99%) during sputtering is 0.5 Pa, and the ...

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Abstract

The invention discloses a spin valve structure with electric field-adjustable magnetoresistance. The spin valve structure is characterized in that: the spin valve structure with a multi-ferroic anti-ferromagnetic layer\a pinning layer\a non-magnetic layer / a free layer is prepared by replacing the anti-ferromagnetic layer in a conventional spin valve with a multi-ferroic material; and the magnetoresistance of the overall spin valve is adjusted and controlled by the anti-ferromagnetic layer. The invention also discloses a preparation process for the structure. The spin valve structure has the advantages that: the adjustment mode of the conventional spin valve is that the adjustment and the control of two states of the magnetoresistance are realized by changing a magnetic field direction of the free layer through an external magnetic field; and the spin valve utilizes a magnetoelectric effect of the multi-ferroic material and realizes the adjustment and the control of the two states of the magnetoresistance, namely an electric field readable and writable magnetic spin valve, by applying an external voltage to change an electric field direction so as to change the magnetic field direction thereof to influence the magnetic field direction of the pinning layer.

Description

Technical field [0001] The invention belongs to the technical field of magnetic storage and provides an electric field-regulated spin valve structure. This kind of spin valve structure with multiferroic material as the antiferromagnetic layer can change the direction of the electric domain of the antiferromagnetic layer by applying an external electric field, and due to the magnetoelectric coupling effect of the multiferroic material, the direction of the magnetic domain is also Changes will occur, causing changes in the magnetic domains of the pinned layer to change the magnetoresistance state of the entire spin valve. This kind of mutual triggering and control of magnetoelectric signals not only contributes to the multi-functionalization of sensors and magnetic storage devices, but is also expected to develop new prototype devices based on this, making ultra-high-speed electric writing and magnetic reading possible. . technical background [0002] Ferromagnetic materials (fer...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11B5/39H01F10/32H01F41/18
Inventor 姜勇苗君张欣张德林徐晓光
Owner UNIV OF SCI & TECH BEIJING
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