Chip structure for preventing latch-up effect and method thereof
A latch-up effect and chip structure technology, applied in the direction of transistors, electrical components, electrical solid-state devices, etc., can solve the problems of increasing the distance between the driver and other modules, increasing the layout area, etc.
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[0012] Aiming at the deficiencies of the existing technical solutions for preventing the latch-up effect in the chip, the present invention proposes to add an nwell minority carrier protection ring between the drive module and the majority carrier protection ring of other modules including the digital-analog module programs such as image 3 shown.
[0013] Because the minority carrier guard ring is to collect electrons in advance, and the minority carrier guard ring is deep, the effect is quite obvious, and it can reduce the current gain of the parasitic lateral transistor Q1, that is, βnpn.
[0014] Correspondingly, the majority carriers collect holes. But because it is a P-type substrate, holes must enter the substrate, and the majority carrier guard ring essentially reduces the local resistance. After the minority carrier protection ring is added, the p+ type majority carrier protection ring is closer to the nwell, which is more conducive to early collection, and the effe...
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