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Low voltage bidirectional protection diode

A protection diode, magnitude technology, applied in the direction of electrical components, circuits, semiconductor devices, etc.

Active Publication Date: 2016-03-16
STMICROELECTRONICS (TOURS) SAS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0002] In general, when it is desired to reduce the breakdown voltage, more specifically, when a symmetrical diode is to be obtained, that is to say, the diode has a substantially equal breakdown voltage close to 6 to 10 volts for the construction of bidirectional protection diodes Each technique has limitations

Method used

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Embodiment Construction

[0023] As is usual with respect to miniature components, the various cross-sectional views are not drawn to scale and should be considered illustrative only.

[0024] figure 1 shows a vertical type of diode consisting of, the P + Type substrate 1 above, respectively, P ++ Type, N ++ Type and P ++ The most heavily doped consecutive layers 3, 4 and 5 of type. "Heaviest doped" here means a doping level greater than or equal to 5x10 19 atoms / cm 3 . The lower surface of the substrate 1 is covered with a metal M1. The assembly of layers 3, 4 and 5 is laterally separated by a peripheral trench 7 with an insulating edge 8, and the upper layer 5 is covered with metal M2. Since the N of the PNP transistor ++ The most heavily doped level at the bottom, the gain of this transistor is rather low, which suppresses the step recovery phenomenon. It should also be noted that the structure has a substantially symmetrical shape. Furthermore, the fact that the active structure is surro...

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Abstract

A vertical bidirectional protection diode, comprising first, second and first conductive type first, second and third regions on a first conductive type heavily doped substrate, the doping levels of these regions are all Greater than 2 to 5x1019 atoms / cm3 and laterally separated by insulating trenches, each of these regions is less than 4 μm thick.

Description

technical field [0001] The present invention relates to a low-voltage bidirectional protection diode, that is to say, the bidirectional breakdown voltage of the diode is less than 10 volts, preferably close to 6 volts. Background technique [0002] In general, when it is desired to reduce the breakdown voltage, more specifically, when a symmetrical diode is to be obtained, that is to say, the diode has a substantially equal breakdown voltage close to 6 to 10 volts for the construction of bidirectional protection diodes All techniques have limitations. Furthermore, known bidirectional diodes generally suffer from a "snapback" phenomenon that exists in at least one or the other of the two bias directions, that is, even if the voltage at which breakdown occurs is very small. Small, for example, close to 10 volts, there will also be a brief initial overvoltage, that is, the voltage across the diode rises to a value greater than the reference value, for example, from 12 volts t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/861H01L29/06H01L21/329
CPCH01L29/6609H01L29/66106H01L29/8618H01L29/866
Inventor 本杰明·莫里永
Owner STMICROELECTRONICS (TOURS) SAS