Static discharge protection device for gate insulation dual junction transistor

Abstract

The invention provides a static discharge protection device for a gate insulation dual junction transistor, which comprises a semiconductor substrate, a high-voltage N-type well arranged in the semiconductor substrate, a patterned insulation region arranged on the high-voltage N-type well and defining a first active region and a second active region, an N-type double diffusion region arranged in the first active region of the high-voltage N-type well, a P-type heavily-doped drain region arranged in the N-type double diffusion region, and a P-type body doped region arranged in the second active region of the high-voltage N-type well, wherein the N-type double diffusion region keeps a specific distance from the P-type body doped region to expose the high-voltage N-type well; a pair of neighboring N-type and P-type heavily-doped source regions are arranged in the P-type body doped region; moreover, a gate structure is arranged on the high-voltage N-type well; one end of the gate structure is connected with the N-type heavily-doped source region; and the other end of the gate structure extends on the patterned insulation region.

Description

[0001] This application is a divisional application, the original application date is November 3, 2008, the application number is 200810174775.5, and the invention name is: gate insulating double junction transistor electrostatic discharge protection element. technical field [0002] The present invention relates to an electrostatic discharge protection device, in particular to an electrostatic discharge protection element for a gate insulating double-junction transistor (IGBT). Background technique [0003] Traditional high-voltage electrostatic discharge (ESD) protection components include laterally diffused metal oxide semi-power transistors (LDMOS Power Transistors), metal oxide semi-transistors (MOSFETs), silicon-controlled rectifiers (SCRs), bicarrier transistors ( BJT), diode (Diode) and field oxide transistor (Field Oxide Device, FOD). In terms of high-voltage electrostatic discharge protection, due to its excessively high trigger voltage (trigger voltage) and low ho...

AI Technical Summary

Problems solved by technology

However, the use of silicon-on-insulator (SOI) substrates and related processes will adversely affect the heat dissipation of ESD components, so the industry urgently needs to effectively deal with the problem of heat dissipation of ESD components

In particular, in the process of ultra-high voltage components, the concentration of wells (well) is low, so that the relative impedance is also high, which is not conducive to a more uniform start-up (uniform turn-on) of ESD components.

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