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Chemical vapor deposition device and sprayer thereof

A technology of chemical vapor deposition and nozzles, which is applied in the direction of gaseous chemical plating, metal material coating process, coating, etc., can solve the problems of poor film uniformity and achieve the effect of improving uniformity

Inactive Publication Date: 2011-08-03
CSMC TECH FAB1 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The problem solved by the invention is that the uniformity of the film deposited by CVD equipment is poor

Method used

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  • Chemical vapor deposition device and sprayer thereof
  • Chemical vapor deposition device and sprayer thereof
  • Chemical vapor deposition device and sprayer thereof

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Experimental program
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Embodiment Construction

[0024] It can be seen from the background technology that the body of the existing shower head is fixedly connected to the bottom plate, so when the uniformity of the film layer formed by CVD is not good, for example, the thickness of the film layer on both sides of the wafer is not uniform, you can adjust the height and inclination of the base However, when the uniformity of the film layer is high in the middle area and low in the edge area, the existing CVD equipment cannot solve it.

[0025] The inventor of the present invention has undergone a large number of experiments, and by modifying the structure of the nozzle, the nozzle is composed of a plurality of sub-nozzles, and the sub-nozzles can move relative to each other.

[0026] In this way, when there is a problem with the uniformity of the film layer of the wafer, such as too thin, too thick, or when the film layer in the middle area is high and the film layer in the edge area is low, the distance between the correspond...

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PUM

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Abstract

The invention relates to a chemical vapor deposition device and a sprayer thereof. The sprayer comprises a first sub-sprayer and a second sub-sprayer; one side of the first sub-sprayer is provided with a first air inlet, the other side of the first sub-sprayer is provided with a plurality of first air outlets; one side of the second sub-sprayer is provided with a second air inlet, the other side of the second sub-sprayer is provided with a plurality of second air outlets; and the first sub-sprayer is nested on the inner wall of the second sub-sprayer, and the first sub-sprayer and the second sub-sprayer can move relative to the direction of the principal axis of the first sub-sprayer. According to the invention, the film evenness of chemical vapor deposition can be improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a chemical vapor deposition device and a spray head thereof. Background technique [0002] In the field of semiconductor manufacturing, chemical vapor deposition (CVD, Chemical Vapor Deposition) is often used to form film layers, such as dielectric layers such as silicon oxide layers and silicon nitride layers. CVD is usually carried out in a reaction chamber. First, the wafer including the device layer is placed on the base in the reaction chamber, and then the reaction gas is introduced. The reaction gas is dissociated into atoms, ions, or atomic groups, which are adsorbed on the surface of the wafer. When the reaction gas molecules meet, the chemical deposition reaction proceeds, and then through the steps of grain growth, grain coalescence, and gap filling, the surface of the wafer is covered with a film layer. By controlling the reaction time, films of different th...

Claims

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Application Information

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IPC IPC(8): C23C16/455C23C16/52
Inventor 卜维亮李勇曾明
Owner CSMC TECH FAB1