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Memorizer with surface impedance state varying with electric domain and manufacturing method thereof

A memory and manufacturing method technology, applied in the field of memory, can solve the problem that the memory cannot meet the technical requirements of microelectronics, and achieve the effect of large randomness

Active Publication Date: 2013-03-13
FUDAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0002] With the further reduction of the feature size of semiconductor devices, the traditional memory can no longer meet the requirements of the rapid development of microelectronics technology.

Method used

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  • Memorizer with surface impedance state varying with electric domain and manufacturing method thereof
  • Memorizer with surface impedance state varying with electric domain and manufacturing method thereof
  • Memorizer with surface impedance state varying with electric domain and manufacturing method thereof

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Embodiment Construction

[0025] The present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. The present invention provides preferred embodiments, but should not be considered limited to the embodiments set forth herein. In the drawings, the thicknesses of layers and regions are exaggerated for convenience of illustration, and the shown sizes do not represent actual sizes. The referenced figures are schematic illustrations of idealized embodiments of the invention, and the illustrated embodiments of the invention should not be construed as limited to the particular shapes of regions illustrated in the figures but are to include resulting shapes, such as manufacturing-induced deviations.

[0026] figure 1 It is a schematic diagram of a basic structure of a memory whose surface resistance state varies with electric domains according to an embodiment of the present invention. Such as figure 1 As shown, the memory includes: 1, a si...

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Abstract

The invention belongs to the technical field of memorizers, and relates to a ferroelectric-film-based memorizer with surface impedance state varying with an electric domain and a manufacturing method thereof. The memorizer comprises an electrode and a resistance transition storage layer below the electrode, wherein the electrode is made of metal electrode material; and the resistance transition storage layer is made of ferroelectric film material. The memorizer is simple in structure, surface current is modulated by polarity variation of the electric domain in the ferroelectric film; based on the specificity of the surface current in different polarization directions of the electric domain, the memorizer can switch between high impedance state and low impedance state under the condition of lower control voltage and extremely high storage density.

Description

technical field [0001] The invention belongs to the technical field of memory, and in particular relates to a memory whose surface resistance state varies with electric domains and a preparation method thereof. Background technique [0002] With the further shrinking of the feature size of semiconductor devices, the traditional memory can no longer meet the requirements of the rapid development of microelectronics technology. The development of next-generation non-volatile memories has recently aroused intense interest in the industry. Ferroelectric memory (FRAM), magnetron memory (MRAM), and phase change memory (PRAM) have received extensive attention one after another. In recent years, research on a resistive random access memory (RRAM) technology based on material resistance changes has become the focus of attention. The basic memory cell of RRAM consists of a resistor in a metal-insulator-metal (MIM) structure. Using voltage or current pulses, the resistance of the MI...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00
Inventor 江安全陈闽川惠文渊刘骁兵
Owner FUDAN UNIV