Unlock instant, AI-driven research and patent intelligence for your innovation.

Dielectric material treatment system and method of operating

A technology of dielectric film and treatment chamber, which is applied in the direction of pretreatment surface, metal material coating process, circuit, etc., and can solve the problem that the initiator is difficult to achieve crosslinking degree, etc.

Inactive Publication Date: 2014-11-12
TOKYO ELECTRON LTD
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, even with a high thermal budget, insufficient initiator generation during thermal curing and extensive methyl termination in the deposited low-k film can make it difficult to achieve the desired degree of crosslinking

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Dielectric material treatment system and method of operating
  • Dielectric material treatment system and method of operating
  • Dielectric material treatment system and method of operating

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0034] In the drawings, specific details are shown, such as specific geometries of processing systems and descriptions of various components and processes, in order to facilitate a complete understanding of the present invention and for purposes of illustration and not limitation. However, it should be understood that the invention may be practiced in other embodiments that depart from these specific details.

[0035] The inventors have realized that alternative curing methods only address some of the disadvantages of thermal curing. For example, alternative curing methods are more efficient in terms of energy transfer than thermal curing processes, and higher energy levels in the form of energetic particles (e.g., accelerated electrons, particles, or neutrons) or in the form of energetic photons can be easily Exciting electrons in the low-k dielectric film effectively breaks chemical bonds and dissociates side groups. These alternative curing methods promote the generation o...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
refractive indexaaaaaaaaaa
elastic modulusaaaaaaaaaa
refractive indexaaaaaaaaaa
Login to View More

Abstract

A system for curing a low dielectric constant (low-k) dielectric film on a substrate is described, wherein the dielectric constant of the low-k dielectric film is less than a value of approximately 4. The system comprises one or more process modules configured for exposing the low-k dielectric film to electromagnetic (EM) radiation, such as infrared (IR) radiation and ultraviolet (UV) radiation.

Description

[0001] Cross References to Related Applications [0002] This application is related to pending U.S. Patent Application No. 11 / 269581, filed November 9, 2005, entitled "MULTI-STEP SYSTEM AND METHOD FOR CURING A DIELECTRIC FILM," filed September 8, 2006, and entitled "THERMAL Pending U.S. Patent Application No. 11 / 269581 for PROCESSING SYSTEM FOR CURING DIELECTRIC FILMS". Additionally, this application is related to co-pending U.S. Patent Application No. 12 / 211640, filed September 16, 2008, and entitled "DIELECTRIC TREATMENT MODULE USING S CANNING IR RADIATION SOURCE" (TDC-013); Co-pending U.S. Patent Application No. 12 / 211675, filed September 16, 2008, and entitled "DIELECTRIC TREATMENT PLATFORM FOR DIELECTRIC FILM DEPOSITION AND CURING" (TDC-015) co-pending US Patent Application No. 12 / 211681. The entire contents of these applications are hereby incorporated by reference in their entirety. technical field [0003] The present invention relates to systems for treating diel...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): B05D3/06C23C14/28B05B5/025
CPCH01L21/67207H01L21/67115H01L21/67184H01L21/2686C23C14/28H01L21/3105
Inventor 刘俊军雅克·法戈特埃里克·M·李多雷尔·I·托玛岳红宇
Owner TOKYO ELECTRON LTD