Temporary carrier bonding and detaching processes
A manufacturing method and wafer technology, applied in the fields of semiconductor/solid-state device manufacturing, electrical components, electrical solid-state devices, etc., can solve the problems of fragmentation and easy damage to the edge of the wafer, and achieve the effect of easy handling
Active Publication Date: 2011-08-24
TAIWAN SEMICON MFG CO LTD
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- Abstract
- Description
- Claims
- Application Information
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Problems solved by technology
In the traditional molding process, a part of the adhesive material is exposed at the edge of the wafer, which makes the edge of the wafer vulnerable to damage during subsequent processes (such as wet etching or dry etching), such as chipped after being detached from the carrier plate
Method used
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[0044] In the following description, numerous specific details are set forth in order to provide a thorough understanding of the invention. However, it will be understood by anyone skilled in the art that the present invention may be practiced without these specific details. In some instances, well-known structures and processes have not been described in detail in order not to unnecessarily obscure the present invention.
[0045] The reference to "an embodiment" in the entire specification means that the specific feature, structure, or characteristic mentioned in this embodiment is included in at least one embodiment of the present invention. Thus, appearances of the phrase "in one embodiment" in various places throughout this specification are not all referring to the same embodiment. Furthermore, the particular features, structures, or characteristics may be combined in any suitable manner with one or more embodiments. It is to be understood that the following drawings ar...
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Abstract
A method of bonding and detaching a temporary carrier used for handling a wafer during the fabrication of semiconductor devices includes bonding a wafer onto a carrier through a first adhesive layer and a second adhesive layer, in which the edge zone of the wafer and the carrier is covered by the first adhesive layer while the edge zone is not covered by the second adhesive layer. A wafer edge clean process is then performed to remove the first adhesive layer adjacent the edge of the wafer and expose the edge zone of the carrier, followed by removing the second adhesive layer from the carrier. After detaching the carrier from the wafer, the first adhesive layer remaining on the wafer is removed. It becomes more easily to detach the carrier from the thinned device wafer without causing damages.
Description
technical field [0001] The present invention relates to the manufacture of a semiconductor device, and more particularly to a method for bonding and detaching a temporary carrier used to handle thinned wafers during the manufacture of the semiconductor device. Background technique [0002] The semiconductor industry continues to grow rapidly due to continuous improvements in the integration density of various electronic components (ie, transistors, diodes, resistors, capacitors, etc.). Mainly, the improvement of integration level comes from the continuous shrinking of the minimum feature size, which allows more components to be integrated into the existing chip area. Therefore, a three-dimensional integrated circuit (3DIC) was created to solve the limiting factors of the length and quantity of interconnections between devices when the number of devices increases. Die to wafer stack bonding is one way to form a 3DIC, where one or more dies are bonded to a wafer, and the size...
Claims
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Patent Timeline
Login to View More IPC IPC(8): H01L21/50H01L21/98
CPCH01L2924/09701H01L2224/16H01L2221/68372H01L2224/0557H01L25/0657H01L2221/68327H01L2225/06527H01L2225/06541H01L2224/13025H01L21/76898H01L2221/68381H01L21/6836H01L21/6835H01L2225/06513H01L2924/01019H01L2924/01078H01L2924/01077H01L2221/6834H01L2924/19041H01L2221/6835H01L2224/0401H01L2924/0002H01L2924/1461H01L2924/00H01L2224/05552
Inventor 吴文进邱文智眭晓林
Owner TAIWAN SEMICON MFG CO LTD