Operating method of memory element

Abstract

The present invention provides an operating method of a memory element. This method stores charges in the source storage area, the drain storage area, and the channel storage area of ​​the charge storage layer located above the source, drain, and channel of the SONOS transistor. A single storage cell has a three-dimensional memory effect. The charges in the channel storage area are written and erased using the FN tunneling method; the charges in the source storage area and the drain storage area are written using the channel hot electron injection method, and the charges are transferred using the unilateral FN tunneling method. Erase. The present invention can store three-digit data in a single storage cell, greatly increasing the memory density of the memory.

Description

technical field [0001] The invention relates to an operation method of a memory element, more specifically, the invention relates to an operation method of a memory element which enables a single transistor to have a multi-bit memory effect. Background technique [0002] The two-bit memory effect of general SONOS (silicon-oxide-nitride-oxide-silicon) memory is to use channel hot electrons and other writing methods to store electrons in the silicon nitride layer near the source or drain terminal, so that a single memory The source and drain of the cell can store information independently, achieving a two-bit effect. [0003] To achieve a memory effect of more than two bits, a multi-level cell (MLC) technology can be used to store different numbers of electrons on the floating gate, so that the memory has multiple start-up voltages. Then, the corresponding current is read by applying a read voltage between different starting voltages, so as to distinguish different memory sta...

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Problems solved by technology

[0004] However, these multi-bit memory methods need to have a sufficiently large initial voltage difference to avoid misjudgment of the memory state

In addition, the number of electrons injected into the floating gate must be quite accurate, so the detection is more complicated, and it causes problems of durability and durability

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