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Plasma etching method and plasma etching device

A plasma and etching technology used in semiconductor/solid-state device manufacturing, electrical components, circuits, etc.

Inactive Publication Date: 2011-09-14
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] However, due to the film thickness of the above-mentioned deposits (deposits), etching is stopped, and therefore, in order to avoid this, it is necessary to adjust the film thickness of the deposits

Method used

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  • Plasma etching method and plasma etching device
  • Plasma etching method and plasma etching device
  • Plasma etching method and plasma etching device

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Embodiment Construction

[0028] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. In addition, in this specification and drawings, the same code|symbol is attached|subjected to the component which has substantially the same functional structure, and the repeated description is abbreviate|omitted.

[0029] (Configuration example of plasma etching apparatus)

[0030] First, a configuration example of a plasma etching apparatus according to an embodiment of the present invention will be described. figure 1 It is a cross-sectional view showing a schematic configuration of the plasma etching apparatus 100 of the present embodiment. Here, a volume junction plasma etching apparatus having a parallel plate type electrode structure capable of performing a high aspect ratio etching process will be described as an example.

[0031] like figure 1 As shown, the plasma etching apparatus 100 has a processing chamber 102 composed of...

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Abstract

A process gas containing a fluorocarbon series gas, which is an etching gas having a deposition property, and an SF6 gas, as an added gas, are introduced into a process chamber; plasma is generated in the process chamber, and by means of this plasma a silicon-containing oxide film formed on a substrate is etched with a resist pattern as a mask. At this time, based on the relationship between the changes in the etching rate and the resist selectivity with respect to the change in the flow volume of the added gas, the flow volume of the added gas is set within a flow volume range for the added gas such that the changes in both the etching rate and the resist selectivity in response to an increase in the flow volume of the added gas tend to increase.

Description

technical field [0001] The invention relates to a plasma etching method and a plasma etching device, and relates to a plasma etching method and a plasma etching process which can be well applied to the plasma etching process of silicon-containing oxide films, especially the high aspect ratio contact (HARC) etching process. Bulk etching device. Background technique [0002] In the manufacturing process of a semiconductor device, a photoresist pattern is formed by a photolithography process on an etched film formed on the surface of a substrate such as a semiconductor wafer (hereinafter also referred to as a "wafer") or an FPD substrate, and this is used as a mask The mold performs the etching of the etched film. For this type of etching, a plasma etching apparatus is used which forms plasma of a processing gas on a substrate disposed in a processing chamber, and performs etching with active species such as ions and radicals in the plasma. [0003] In recent years, with the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/3065
CPCH01L21/31116H01L21/3065
Inventor 川上雅人永关澄江
Owner TOKYO ELECTRON LTD