Light-emitting devices and its forming method

A light-emitting device and light-emitting unit technology, applied in the structure of optical waveguide semiconductors, semiconductor devices, electrical components, etc., can solve the problems of increased cost and complexity, and the inability to improve light leakage efficiency, etc., to achieve low cost and increase light output area Effect

Active Publication Date: 2014-05-14
EPISTAR CORP
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the above method increases the cost and complexity of the packaging substrate and the bonding process for connecting the light-emitting device chip to the packaging substrate.
In addition, the solutions using the above packaging substrates cannot improve their light-extraction efficiency.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Light-emitting devices and its forming method
  • Light-emitting devices and its forming method
  • Light-emitting devices and its forming method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0038] Hereinafter, a novel light-emitting device and a method of forming the same according to an embodiment of the present invention will be described. And the figure is shown in the middle stage of the manufacturing process in the embodiment. And then discuss the changes and operations of the embodiment of the present invention. In these different drawings and illustrated embodiments, the same reference numerals are used to represent the same elements.

[0039] Please refer to figure 1 First, the chip 100 including the substrate 20 is provided. The chip 100 may be a part of an un-diced wafer including a plurality of identical chips. In one embodiment, the substrate 20 may be made of sapphire (Al 2 O 3 ) Formed. In other embodiments, the substrate 20 is a silicon-containing substrate, such as a silicon carbide substrate or a silicon substrate. In other embodiments, the substrate 20 includes a compound semiconductor material of group III and / or group V elements, or a well-k...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

A device includes a textured substrate having a trench extending from a top surface of the textured substrate into the textured substrate, wherein the trench comprises a sidewall and a bottom. A light-emitting device (LED) includes an active layer over the textured substrate. The active layer has a first portion parallel to the sidewall of the trench and a second portion parallel to the bottom of the trench.

Description

Technical field [0001] The present invention relates to a light-emitting device (light-emitting device, LED), and in particular to a method for manufacturing a light-emitting device with uneven active layers (textured active layers) and a formation structure thereof. Background technique [0002] Light-emitting devices (LEDs), such as light-emitting diodes (light-emitting diodes) or laser diodes (laser diodes), have been widely used in many applications. As those of ordinary skill in the art know, the light-emitting device may include a semiconductor light-emitting element having multiple semiconductor layers formed on a substrate. The above-mentioned substrate may be formed of materials such as gallium arsenide, gallium phosphide, alloys of the above-mentioned materials, silicon carbide, and / or sapphire. The continuous development of light-emitting devices has produced highly efficient and durable light sources covering the visible spectrum and beyond. In this way, the use of ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/20H01L33/24H01S5/24
CPCH01L33/24H01L33/22H01L33/04
Inventor 黄信杰
Owner EPISTAR CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products