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Light-emitting devices and its forming method

A light-emitting device and light-emitting unit technology, applied in the structure of optical waveguide semiconductors, semiconductor devices, electrical components, etc., can solve the problems of increased cost and complexity, and the inability to improve light leakage efficiency, etc., to achieve low cost and increase light output area Effect

Active Publication Date: 2014-05-14
EPISTAR CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the above method increases the cost and complexity of the packaging substrate and the bonding process for connecting the light-emitting device chip to the packaging substrate.
In addition, the solutions using the above packaging substrates cannot improve their light-extraction efficiency.

Method used

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  • Light-emitting devices and its forming method
  • Light-emitting devices and its forming method
  • Light-emitting devices and its forming method

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Embodiment Construction

[0038] Hereinafter, a novel light-emitting device and a method of forming the same according to an embodiment of the present invention will be described. And the figure is shown in the middle stage of the manufacturing process in the embodiment. And then discuss the changes and operations of the embodiment of the present invention. In these different drawings and illustrated embodiments, the same reference numerals are used to represent the same elements.

[0039] Please refer to figure 1 First, the chip 100 including the substrate 20 is provided. The chip 100 may be a part of an un-diced wafer including a plurality of identical chips. In one embodiment, the substrate 20 may be made of sapphire (Al 2 O 3 ) Formed. In other embodiments, the substrate 20 is a silicon-containing substrate, such as a silicon carbide substrate or a silicon substrate. In other embodiments, the substrate 20 includes a compound semiconductor material of group III and / or group V elements, or a well-k...

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Abstract

A device includes a textured substrate having a trench extending from a top surface of the textured substrate into the textured substrate, wherein the trench comprises a sidewall and a bottom. A light-emitting device (LED) includes an active layer over the textured substrate. The active layer has a first portion parallel to the sidewall of the trench and a second portion parallel to the bottom of the trench.

Description

Technical field [0001] The present invention relates to a light-emitting device (light-emitting device, LED), and in particular to a method for manufacturing a light-emitting device with uneven active layers (textured active layers) and a formation structure thereof. Background technique [0002] Light-emitting devices (LEDs), such as light-emitting diodes (light-emitting diodes) or laser diodes (laser diodes), have been widely used in many applications. As those of ordinary skill in the art know, the light-emitting device may include a semiconductor light-emitting element having multiple semiconductor layers formed on a substrate. The above-mentioned substrate may be formed of materials such as gallium arsenide, gallium phosphide, alloys of the above-mentioned materials, silicon carbide, and / or sapphire. The continuous development of light-emitting devices has produced highly efficient and durable light sources covering the visible spectrum and beyond. In this way, the use of ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/20H01L33/24H01S5/24
CPCH01L33/24H01L33/22H01L33/04
Inventor 黄信杰
Owner EPISTAR CORP
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