Semiconductor device and manufacturing method thereof

Abstract

The present disclosure provides methods and apparatus for sensor element isolation in a backside illuminated image sensor. In one embodiment, a method of fabricating a semiconductor device includes providing a sensor layer having a frontside surface and a backside surface, forming a plurality of frontside trenches in the frontside surface of the sensor layer, and implanting oxygen into the sensor layer through the plurality of frontside trenches. The method further includes annealing the implanted oxygen to form a plurality of first silicon oxide blocks in the sensor layer, wherein each first silicon oxide block is disposed substantially adjacent a respective frontside trench to form an isolation feature. A semiconductor device fabricated by such a method is also disclosed.

Description

technical field

[0001] The invention relates to a semiconductor device and a manufacturing method thereof, in particular to a method and device for isolating a sensing element of a back-illuminated sensor. Background technique

[0002] In semiconductor processing, backside illuminated sensors are used to sense the amount of exposed light projected onto the rear surface of a substrate or sensing layer. Back-illuminated sensors may be formed in a substrate, and light is projected onto the rear surface of the substrate to reach the sensor. However, the light directed toward one sensing pixel also has part of the light directed toward other sensing pixels, which causes optical and electrical crosstalk between different sensing pixels, and has not yet been solved.

[0003] Therefore, in this technical field, there is a need for a semiconductor device and its manufacturing method to meet the above-mentioned needs and overcome the shortcomings of the prior art. In particular, the...

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