4 results about "Back-illuminated sensor" patented technology

The application discloses a kind of low-illumination scene-oriented adaptive image noise reduction processing method, it is related to digital image processing technical field.The steps include: step S100: low-illumination image is collected and preprocessed, preprocessing includes dark current correction, bad point repair and lens distortion correction;By using back-illuminated CMOS sensor to collect image and execute dark current correction, bad point repair, the preprocessing operation of lens distortion correction, in combination with average brightness and gray standard deviation division low-illumination grade, according to noise intensity and distribution characteristics identify noise type, again based on preset parameter mapping table adaptive matching filter window size, noise reduction intensity weight and detail retention threshold technical means, it is difficult to eliminate in the process of low-illumination image acquisition fixed noise and system error, traditional noise reduction algorithm parameter fixed cannot adapt to different low-illumination grade and noise type, the problem of over-reduction or noise reduction deficiency, image edge detail loss is serious in noise reduction process.

An image sensor includes a p-type silicon layer, a silicon layer disposed on the p-type silicon layer, a p-type SiGe layer disposed on the p-type silicon layer, a boron layer disposed on the p-type SiGe layer, and an anti-reflective coating disposed on the boron layer. Trenches can be formed in the image sensor such that the boron layer is disposed in the trenches.

An image sensor includes a p-type silicon layer, a silicon layer disposed on the p-type silicon layer, a p-type SiGe layer disposed on the p-type silicon layer, a boron layer disposed on the p-type SiGe layer, and an anti-reflective coating disposed on the boron layer. A trench can be formed in the image sensor such that the boron layer is disposed in the trench.

The invention discloses a metal grid forming process for a back-illuminated sensor, and the process comprises the steps: providing a substrate, forming a plurality of deep trench isolation structures in the substrate, sequentially forming an oxide side wall layer, a silicon dioxide filling layer and an adhesion layer on the surface of the substrate, and forming a metal layer on the adhesion layer; depositing a silicon nitride mask layer on the metal layer; sequentially forming a silicon oxide layer, a metal hard mask layer and a protective layer on the silicon nitride mask layer; forming a patterned photoresist layer, wherein a reserved region of the photoresist layer shields the protective layer and the metal hard mask layer which are positioned right above the deep trench isolation structure; etching the exposed protective layer and the metal hard mask layer by taking the photoresist layer as a mask; etching the exposed silicon oxide layer and the silicon nitride mask layer by taking the residual protective layer and the metal hard mask layer as masks; the residual silicon oxide layer and the silicon nitride mask layer are used as masks, the exposed metal layer is subjected to dry etching, and the residual metal layer forms a metal grid; and depositing a liner oxide layer.