33 results about "Back-illuminated sensor" patented technology

Disclosed is a backside illuminated image sensor including a light receiving element formed in a first substrate, an interlayer insulation layer formed on the first substrate including the light receiving element, a via hole formed through the interlayer insulation layer and the first substrate while being spaced apart from the light receiving element, a spacer formed on an inner sidewall of the via hole, an alignment key to fill the via hole, interconnection layers formed on the interlayer insulation layer in a multilayer structure in which a backside of a lowermost layer of the interconnection layers is connected to the alignment key, a passivation layer covering the interconnection layers, a pad locally formed on a backside of the first substrate and connected to a backside of the alignment key, and a color filter and a microlens formed on the backside of the first substrate corresponding to the light receiving element.

Provided is a backside-illuminated sensor including a semiconductor substrate having a front surface and a back surface. A plurality of image sensor elements are formed on the front surface of the semiconductor substrate. At least one of the image sensor elements includes a transfer transistor and a photodetector. The gate of the transfer transistor includes an optically reflective layer. The gate of the transfer transistor, including the optically reflective layer, overlies the photodetector. In one embodiment, the gate overlies the photodetector by at least 5%.

A backside illuminated sensor includes a semiconductor substrate having a front surface and a back surface, and a plurality of pixels formed on the front surface of the semiconductor substrate. The sensor further includes a plurality of absorption depths formed within the back surface of the semiconductor substrate. Each of the plurality of absorption depths is arranged according to each of the plurality of pixels. A method for forming a backside illuminated includes providing a semiconductor substrate having a front surface and a back surface and forming a first, second, and third pixel on the front surface of the semiconductor substrate. The method further includes forming a first, second, and third thickness within the back surface of the semiconductor substrate, wherein the first, second, and third thickness lies beneath the first, second, and third pixel, respectively.

The present disclosure provides one embodiment of a semiconductor structure. The semiconductor structure comprises a device substrate having a front side and a back side; an interconnect structure disposed on the front side of the device substrate; and a bonding pad connected to the interconnect structure. The bonding pad comprises a recessed region in a dielectric material layer; a dielectric mesa of the dielectric material layer interposed between the recessed region; and a metal layer disposed in the recessed region and on the dielectric mesa.

A backside-illuminated sensor includes a substrate, at least one lens and at least one pixel structure. The substrate has a front surface and a backside surface, and the lens is formed on the backside surface of the substrate and the pixel structure is formed on a pixel area included in the front surface of the substrate, where a projected area of the pixel area on the backside surface in a thickness direction of the substrate is covered by the lens. The pixel structure includes a first power node for receiving a first supply voltage, a second power node for receiving a second supply voltage different from the first supply voltage, a sensing element and a capacitor for noise reduction. The sensing element generates a sensing signal according to an incident luminance from the lens.

The present disclosure provides methods and apparatus for sensor element isolation in a backside illuminated image sensor. In one embodiment, a method of fabricating a semiconductor device includes providing a sensor layer having a frontside surface and a backside surface, forming a plurality of frontside trenches in the frontside surface of the sensor layer, and implanting oxygen into the sensor layer through the plurality of frontside trenches. The method further includes annealing the implanted oxygen to form a plurality of first silicon oxide blocks in the sensor layer, wherein each first silicon oxide block is disposed substantially adjacent a respective frontside trench to form an isolation feature. The invention could prevent the photoelectron from leaking to the adjacent pixel so as to reduce or substantially eliminate the electric cross talk between the sensor elements.

The embodiment of the invention discloses an underwater high-definition photographic system for a deep sea. The underwater high-definition photographic system comprises pressure-resistant glass, a 16-mm fixed camera lens, an image collecting module, an image processing module, a power source management module and an interface, wherein the thickness of the pressure-resistant glass is 15 mm-20 mm, the fixed camera lens is arranged at the rear end of the pressure-resistant glass, the image collecting module is arranged at the rear end of the lens, the image processing module is arranged at the rear end of the image collecting module, the power source management module is arranged at the rear end of the image processing module, and the interface is formed in the rear end of the power source management module. The pressure-resistant glass, the lens, the image collecting module, the image processing module, the power source management module and the interface are packaged through a frame which is wholly sealed and resistant to pressure. Images are collected through a low-pressure-difference serial port of the MIPI interface and a backside-illuminated CMOS sensor, image quality can be better under the condition of insufficient light in the deep sea, and a towed body working in the deep sea can be higher in image collecting speed and anti-interference capacity when shaken violently in ocean currents.

A backside illuminated sensor comprising a supporting substrate, a semiconductor layer which comprises a photodiode comprising a region of n-doped semiconductor provided at a first surface of the semiconductor layer, and a region of p-doped semiconductor, wherein a depletion region is formed between the region of n-doped semiconductor and the region of p-doped semiconductor, and a layer of p-doping protective material provided on a second surface of the semiconductor layer, wherein the first surface of the semiconductor layer is fixed to a surface of the supporting substrate.

The invention relates to the technical field of semiconductor manufacture, particularly to a method for preparing a backside-illuminated sensor. After a metal grid bottom bonding layer and metal layer film-coating process, a vacuum breaking process and a surface cleaning treatment process are performed on a semiconductor substrate in sequence, then an anti-reflection layer is deposited on the metal layer, and finally a plurality of metal grids whose upper surfaces have anti-reflection layers are formed through patterning and etching, thereby avoiding an abnormal projection phenomenon in a reverse side metal grid layer process, reducing abnormal growth, avoiding extra light crosstalk between different pixels, and improving performance of a backside-illuminated sensor chip.

A back illuminated sensor preferably is included as a collector component of a detector for use in intraoral and extraoral 2D and 3D dental radiography, positron emission tomography (PET) and single-photon emission computed tomography (SPECT). The disclosed imaging method includes one or more intraoral or extraoral emitters for emitting a low-dose gamma ray or x-ray beam through a dental examination area; and one or more intraoral or extraoral detectors for receiving the beam, each detector including a back illuminated sensor. Within the detector, the beam preferably is converted into light and then focused and collected at a photocathode layer without passing through the wiring layer of the back illuminated sensor.

The invention provides a manufacturing method of a backside illuminated CMOS sensor and a method for manufacturing an electron impact CMOS sensor, wherein the backside illuminated CMOS sensor and the electron impact CMOS sensor are capable of suppressing variation and increase of variation of characteristics of an analog circuit formed on a surface. This method for manufacturing a backside illuminated CMOS sensor (100) comprises: a formation step in which an N-type photosensitive region (50) is formed inside a silicon substrate (305); an implantation step in which ions for forming a P + diffusion layer (270) are implanted into the back surface of the silicon substrate (305); and an irradiation step in which laser light is irradiated from the back surface in order to activate the implanted ions, wherein the laser light is irradiated to the back-illuminated CMOS sensor (100) excluding the region where the analog circuit (40) is formed on the surface.

The invention provides a method for taking crystal grains from a backside illuminated CMOS sensor and application, and relates to the technical field of CMOS sensors. The method comprises the following steps: firstly, carrying out mixed acid treatment on the back-illuminated CMOS sensor, flatly fixing one side, close to a circuit layer, of an obtained pretreated crystal grain on a silicon wafer, and carrying out optional primary grinding on one side, far away from the circuit layer, of the pretreated crystal grain so as to remove a possibly residual packaging material; then reactive ion etching and secondary grinding are carried out to enable the circuit layer to be completely exposed and keep certain flatness, and crystal grains are obtained; wherein the pretreated crystal grains are flatly fixed on the silicon wafer, and the silicon wafer can provide a supporting effect for the circuit layer, so that the problems of falling or layering of the circuit layer and the like cannot occur in the subsequent extraction process, thereby realizing complete and intact extraction of the crystal grains, and providing a basis for subsequent failure analysis work. The invention further provides a failure analysis method of the backside illuminated CMOS sensor.