An
image sensor includes a p-type
silicon layer, a
silicon layer disposed on the p-type
silicon layer, a p-type SiGe layer disposed on the p-type silicon layer, a
boron layer disposed on the p-type SiGe layer, and an anti-reflective
coating disposed on the
boron layer. Trenches can be formed in the
image sensor such that the
boron layer is disposed in the trenches.