7 results about "Back-illuminated sensor" patented technology

A back illuminated sensor is included as a collector component of a detector for use in intraoral and extraoral 2D and 3D dental radiography, digital tomosynthesis, photon-counting computed tomography, positron emission tomography (PET), and single-photon emission computed tomography (SPECT). The disclosed imaging method includes one or more intraoral or extraoral emitters for emitting a low-dose gamma ray or x-ray beam through an examination area; and one or more intraoral or extraoral detectors for receiving the beam, each detector including a back illuminated sensor. Within the detector, the beam is converted into light and then focused and collected at a photocathode layer without passing through the wiring layer of the back illuminated sensor.

The application discloses a kind of low-illumination scene-oriented adaptive image noise reduction processing method, it is related to digital image processing technical field.The steps include: step S100: low-illumination image is collected and preprocessed, preprocessing includes dark current correction, bad point repair and lens distortion correction;By using back-illuminated CMOS sensor to collect image and execute dark current correction, bad point repair, the preprocessing operation of lens distortion correction, in combination with average brightness and gray standard deviation division low-illumination grade, according to noise intensity and distribution characteristics identify noise type, again based on preset parameter mapping table adaptive matching filter window size, noise reduction intensity weight and detail retention threshold technical means, it is difficult to eliminate in the process of low-illumination image acquisition fixed noise and system error, traditional noise reduction algorithm parameter fixed cannot adapt to different low-illumination grade and noise type, the problem of over-reduction or noise reduction deficiency, image edge detail loss is serious in noise reduction process.

The invention provides an intelligent DLP seamless large-screen dynamic adaptive adjustment system, and relates to the technical field of DLP large-screen dynamic adaptive adjustment, and the system comprises a precision sensing unit, a heterogeneous calculation module, a dynamic compensation execution mechanism and a self-diagnosis subsystem. Optical, mechanical and environmental data are collected in real time through a backside illuminated CMOS sensor array, a dual-wavelength infrared photoelectric encoder and a distributed temperature sensor which are coaxially mounted; using an edge detection-optical flow fusion processor to identify the rainbow pattern, and combining with a time frequency feature extractor to quantify the stroboscopic intensity perceived by the human eyes; dynamic adaptive adjustment is realized through color wheel harmonic drive, LED nonlinear modulation and DMD time sequence compensation. The system integrates fault mode matching and a multi-objective optimization algorithm, the problems of rainbow lines, stroboscopic lag, chromatic aberration deviation and environmental interference of a traditional DLP system are effectively solved, and the display consistency and the user experience are remarkably improved.

An image sensor includes a p-type silicon layer, a silicon layer disposed on the p-type silicon layer, a p-type SiGe layer disposed on the p-type silicon layer, a boron layer disposed on the p-type SiGe layer, and an anti-reflective coating disposed on the boron layer. Trenches can be formed in the image sensor such that the boron layer is disposed in the trenches.

An image sensor includes a p-type silicon layer, a silicon layer disposed on the p-type silicon layer, a p-type SiGe layer disposed on the p-type silicon layer, a boron layer disposed on the p-type SiGe layer, and an anti-reflective coating disposed on the boron layer. A trench can be formed in the image sensor such that the boron layer is disposed in the trench.

The invention discloses a metal grid forming process for a back-illuminated sensor, and the process comprises the steps: providing a substrate, forming a plurality of deep trench isolation structures in the substrate, sequentially forming an oxide side wall layer, a silicon dioxide filling layer and an adhesion layer on the surface of the substrate, and forming a metal layer on the adhesion layer; depositing a silicon nitride mask layer on the metal layer; sequentially forming a silicon oxide layer, a metal hard mask layer and a protective layer on the silicon nitride mask layer; forming a patterned photoresist layer, wherein a reserved region of the photoresist layer shields the protective layer and the metal hard mask layer which are positioned right above the deep trench isolation structure; etching the exposed protective layer and the metal hard mask layer by taking the photoresist layer as a mask; etching the exposed silicon oxide layer and the silicon nitride mask layer by taking the residual protective layer and the metal hard mask layer as masks; the residual silicon oxide layer and the silicon nitride mask layer are used as masks, the exposed metal layer is subjected to dry etching, and the residual metal layer forms a metal grid; and depositing a liner oxide layer.

The utility model relates to a back-illuminated image sensor, which comprises a device wafer, an isolation layer, an isolation lamination layer and a filter layer, and is characterized in that the device wafer comprises the isolation layer covering a plurality of groove isolation structures; the surface, deviating from the trench isolation structure, of the isolation layer comprises isolation laminated layers and filter layers which are alternately distributed in the first direction; the isolation laminated layer comprises a first dielectric layer, a second dielectric layer located between the first dielectric layer and the isolation layer, and a conductive layer located on the outer side surface of the second dielectric layer, and the refractive index of the conductive layer is located in a target refractive index range. The second dielectric layer is arranged in the isolation lamination layer, and the conductive layer is arranged on the outer side surface of the second dielectric layer, so that the stress of the isolation lamination layer on the device wafer is small, the problem that the warping degree of the device wafer is too large due to the large stress of the isolation lamination layer is solved, and the refractive index of the conductive layer is within the target refractive index range; optical crosstalk can be effectively avoided, and the quality of a backside illuminated sensor product is improved.