30results about How to "Light receiving efficiency" patented technology

A solid-state imaging device includes: an imaging area in which light receiving portions are disposed; an interconnect layer disposed on the light receiving portions, the interconnect layer including metal interconnects having openings and first insulating films; inner-layer lenses formed over the interconnect layer in one-to-one relationship with the light receiving portions; a transparent second insulating film formed on the interconnect layer and the inner-layer lenses; top lenses formed on the second insulating film in one-to-one relationship with the light receiving portions, an upper face of each of the top lenses being a convexly curved face; and a transparent film on the top lenses, the transparent film being formed of a material having a refractive index smaller than a refractive index of the top lenses. In this way, a focal point of at least part of incident light can be situated above a semiconductor substrate.

The present disclosure relates to an apparatus for measuring bio-information, the apparatus including a heart rate sensor unit configured to measure heart rates by receiving a light that has entered and come out from skin, an acceleration sensor unit configured to output a step count by measuring the step count of a wearer, a display unit configured to display the measured heart rates and step count, and a wrist-wearable connection unit configured to electrically connect the heart rate sensor, the acceleration sensor unit and the display unit, whereby heart rate can be accurately measured using a line light source instead of point light source, even if the apparatus is not fully attached to a wrist. The apparatus includes a heart rate sensor unit configured to improve a light receiving efficiency using four light receiving units.

A solid-state image pickup device includes: a semiconductor substrate; and a plurality of pixel circuits formed on the semiconductor substrate; each of the plurality of pixel circuits formed on the semiconductor substrate including a photoelectric conversion element, a first buried gate electrode formed adjacent to the photoelectric conversion element, a second buried gate electrode formed away from each of the photoelectric conversion element and the first buried gate electrode, a first diffusion layer formed between the first buried gate electrode and the second buried gate electrode, and a second diffusion layer formed between the first buried gate electrode and the second buried gate electrode away from the first diffusion layer so as to overlap the first diffusion layer; wherein electric charges accumulated in the photodiode conversion element are transferred to the second diffusion layer through the first diffusion layer.

An imaging element includes: a plurality of photoelectric converting elements that receive irradiation of light and convert the light into electrical charges; and a color filter layer which has a red filter, a green filter, and a blue filter which are respectively provided for the photoelectric converting elements. Partition walls having a lower refractive index than those of the red filter, the green filter, and the blue filter are provided only around the peripheries of the red filters.

Disclosed is a backside illuminated image sensor including a light receiving element formed in a first substrate, an interlayer insulation layer formed on the first substrate including the light receiving element, a via hole formed through the interlayer insulation layer and the first substrate while being spaced apart from the light receiving element, a spacer formed on an inner sidewall of the via hole, an alignment key to fill the via hole, interconnection layers formed on the interlayer insulation layer in a multilayer structure in which a backside of a lowermost layer of the interconnection layers is connected to the alignment key, a passivation layer covering the interconnection layers, a pad locally formed on a backside of the first substrate and connected to a backside of the alignment key, and a color filter and a microlens formed on the backside of the first substrate corresponding to the light receiving element.

A solid-state image pickup device in which electric charges accumulated in a photodiode conversion element are transferred to a second diffusion layer through a first diffusion layer.

A method is provided to provide a photodetector that can enhance the light receiving sensitivity with a relatively simple structure, and that can maintain a high speed responsiveness. A photodetector having a MSM (Metal-Semiconductor-Metal) structure, including a substrate, a multilayer film that is disposed over the substrate and includes a low refractive index layer and a high refractive index layer that are alternately laminated as a unit cycle. At least one of the low refractive index layer and the high refractive index layer is a photoabsorption layer composed of semiconductor, and a portion that is embedded in the multilayer film, the portion having at least one pair of opposing electrodes within the multilayer film. The multilayer film is formed such that a wavelength region corresponding to a band edge of a photonic band overlaps at least a part of an absorption band of the photoabsorption layer, to thereby delay a group velocity of incidence light Pin with a predetermined wavelength that belongs to the absorption band of the photoabsorption layer.

An optical display device, including a light guiding plate, a light detecting sensor and at least two illuminants. The light detecting sensor and the illuminants are commonly mounted on a wiring board with the at least two or more illuminants disposed to face a light incidence surface of the light guiding plate. The light detecting sensor is disposed on the same side of the wiring board as the illuminants with respect to the light guiding plate.

In an ink jet printer using an ink cartridge having an ink tank for storing ink therein and a recording head for ejecting the ink stored in the ink tank as ink drops and forming an image on a recording paper sheet, the detection accuracy of a displacement detection sensor for detecting a displacement of printing position is improved while reducing manufacturing costs of the displacement detection sensor. The displacement detection sensor is comprised of a light emitting device for emitting diffused light, a first lens for focusing the light emitted from the light emitting device on a recording paper sheet, a second lens for focusing the light reflected by the recording paper sheet and a light receiving device for receiving the light focused by the second lens. By focusing the diffused light emitted from the light emitting device by the first lens, the diameter of a beam spot projected on the recording paper sheet is made smaller than a longitudinal dimension and a width dimension of each component forming a displacement detection pattern.

In an ink jet printer using an ink cartridge having an ink tank for storing ink therein and a recording head for ejecting the ink stored in the ink tank as ink drops and forming an image on a recording paper sheet, the detection accuracy of a displacement detection sensor for detecting a displacement of printing position is improved while reducing manufacturing costs of the displacement detection sensor. The displacement detection sensor is comprised of a light emitting device for emitting diffused light, a first lens for focusing the light emitted from the light emitting device on a recording paper sheet, a second lens for focusing the light reflected by the recording paper sheet and a light receiving device for receiving the light focused by the second lens. By focusing the diffused light emitted from the light emitting device by the first lens, the diameter of a beam spot projected on the recording paper sheet is made smaller than a longitudinal dimension and a width dimension of each component forming a displacement detection pattern.

A solid-state imaging device includes: an imaging area in which light receiving portions are disposed; an interconnect layer disposed on the light receiving portions, the interconnect layer including metal interconnects having openings and first insulating films; inner-layer lenses formed over the interconnect layer in one-to-one relationship with the light receiving portions; a transparent second insulating film formed on the interconnect layer and the inner-layer lenses; top lenses formed on the second insulating film in one-to-one relationship with the light receiving portions, an upper face of each of the top lenses being a convexly curved face; and a transparent film on the top lenses, the transparent film being formed of a material having a refractive index smaller than a refractive index of the top lenses. In this way, a focal point of at least part of incident light can be situated above a semiconductor substrate.

An organic light emitting display includes an organic light emitting diode formed on a substrate, coupled to a transistor; a photodiode formed on the substrate and including a semiconductor layer including a high-concentration P doping region, an intrinsic region with defects and a high-concentration N doping region; and a controller that uniformly controls the luminance of light emitted from the organic light emitting diode by controlling a voltage applied to the first electrode and the second electrode according to the voltage outputted from the photodiode.

A solid-state imaging device includes: an imaging area in which light receiving portions are disposed; an interconnect layer disposed on the light receiving portions, the interconnect layer including metal interconnects having openings and first insulating films; inner-layer lenses formed over the interconnect layer in one-to-one relationship with the light receiving portions; a transparent second insulating film formed on the interconnect layer and the inner-layer lenses; top lenses formed on the second insulating film in one-to-one relationship with the light receiving portions, an upper face of each of the top lenses being a convexly curved face; and a transparent film on the top lenses, the transparent film being formed of a material having a refractive index smaller than a refractive index of the top lenses. In this way, a focal point of at least part of incident light can be situated above a semiconductor substrate.

An optical communication module includes a base substrate; a wavelength branching filter arranged on the base substrate, in which a light is allowed to go through or be reflected according to a wavelength thereof; a photodetector arranged on the base substrate to receive a light passed through the wavelength branching filter and to convert the light into an electric signal; and a light emitting device arranged on the base substrate to provide a transmission light. The transmission light is outputted through the wavelength branching filter. The optical detector comprises a light receiving portion which is formed to have a first length and a second length, which is shorter than the first length. The first length of the light receiving portion is perpendicular to an optical axis of an input light on a plane parallel to a surface of the substrate, and a second length of the light receiving portion is parallel to the optical axis of the input light.

This stacked solar battery device includes a plurality of solar battery units 4, an enclosure case made of a metal plate to house these solar battery units 4 therein, a cover glass having a partial cylindrical lens formed. The plurality of solar battery units 4 are housed in a plurality of recesses of the enclosure case, and are sealed with a sealing material of synthetic resin. The solar battery unit 4 has a planar light receiving solar battery module 10, and rod light receiving solar battery modules 30 and 50 stacked so that the module having a shorter center wavelength of the sensitivity wavelength band is positioned closer to the incident side of the sunlight. The solar battery module 10 is configured so that five planar light receiving solar-battery cells 11 are connected in parallel with four connection rods 20a and 20b, and the sunlight modules 30 and 50 are configured so that five sub modules 31 and 51 are connected in parallel respectively with the connection rods 40a, 40b, 60a and 60b. The sub modules 31 and 51 are configured so that a plurality of rod-shaped solar battery cells 32 and 52 respectively are connected in series.

A LiDAR sensing device including: a sensing light source unit configured to radiate sensing light; a light transmitting reflector configured to reflect the sensing light radiated from the sensing light source unit; a scanner unit configured to reflect the sensing light reflected from the light transmitting reflector into a target, and to reflect incident light reflected from the target; a light receiving lens configured to pass the incident light reflected from the scanner unit, and integrated with the light transmitting reflector; a light receiving reflector configured to reflect the incident light passing through the light receiving lens; and an optical detecting unit into which the incident light reflected from the light receiving reflector is incident.

An optical communication module includes a base substrate; a wavelength branching filter arranged on the base substrate, in which a light is allowed to go through or be reflected according to a wavelength thereof; a photodetector arranged on the base substrate to receive a light passed through the wavelength branching filter and to convert the light into an electric signal; and a light emitting device arranged on the base substrate to provide a transmission light. The transmission light is outputted through the wavelength branching filter. The optical detector comprises a light receiving portion which is formed to have a first length and a second length, which is shorter than the first length. The first length of the light receiving portion is perpendicular to an optical axis of an input light on a plane parallel to a surface of the substrate, and a second length of the light receiving portion is parallel to the optical axis of the input light.

An organic light emitting display includes an organic light emitting diode formed on a substrate, coupled to a transistor; a photodiode formed on the substrate and including a semiconductor layer including a high-concentration P doping region, an intrinsic region with defects and a high-concentration N doping region; and a controller that uniformly controls the luminance of light emitted from the organic light emitting diode by controlling a voltage applied to the first electrode and the second electrode according to the voltage outputted from the photodiode.

Provided are an optical device that is a small and thin optical device including a redistribution layer and has high light emitting efficiency and light receiving efficiency, and a method for manufacturing the optical device. An optical device includes: a photoelectric conversion element configured to include a semiconductor substrate, a semiconductor layer capable of receiving or emitting light, and electrodes; a sealing portion configured to expose a surface of the photoelectric conversion element on the opposite side to an electrode-formed surface of the photoelectric conversion element on which the electrodes are formed; a redistribution layer configured to include a reflecting portion disposed in a region in which, when viewed in plan, the semiconductor layer and the electrodes do not overlap each other and configured to reflect the light to a side on which the semiconductor layer is located; and external connection terminals configured to be coupled to the redistributions.