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Back-illuminated sensor and a method of manufacturing a sensor

一种图像传感器、外延层的技术，应用在半导体器件、电固体器件、辐射控制装置等方向

Pending Publication Date: 2021-07-23
KLA CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This oxide layer will degrade under high intensity DUV, VUV, EUV or charged particle radiation and can cause sensor degradation

Method used

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  • Back-illuminated sensor and a method of manufacturing a sensor
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Embodiment Construction

[0026] While claimed subject matter will be described in terms of certain embodiments, other embodiments, including embodiments that do not provide all of the benefits and features set forth herein, are also within the scope of the disclosure. Various structural, logical, process step and electrical changes may be made without departing from the scope of the present invention. Accordingly, the scope of the invention is defined only with reference to the appended claims.

[0027] The following description is presented to enable one of ordinary skill in the art to make and use the invention as presented in the context of a particular application and its requirements. As used herein, eg "top", "bottom", "front", "rear", "above", "below", "upper", "upwardly", "downwardly", "downwardly" " and "downward" directional terms are intended to provide relative positions for descriptive purposes, and are not intended to specify an absolute frame of reference. Various modifications to the...

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Abstract

An image sensor utilizes a pure boron layer and a second epitaxial layer having a p-type dopant concentration gradient to enhance sensing DUV, VUV or EUV radiation. Sensing (circuit) elements and associated metal interconnects are fabricated on an upper surface of a first epitaxial layer, then the second epitaxial layer is formed on a lower surface of the first epitaxial layer, and then a pure boron layer is formed on the second epitaxial layer. The p-type dopant concentration gradient is generated by systematically increasing a concentration of p-type dopant in the gas used during deposition / growth of the second epitaxial layer such that a lowest p-type dopant concentration of the second epitaxial layer occurs immediately adjacent to the interface with the first epitaxial layer, and such that a highest p-type dopant concentration of the second epitaxial layer occurs immediately adjacent to the interface with pure boron layer.

Description

[0001] Related applications / patents [0002] This application claims the 62nd / 2018 application titled "BACK-ILLUMINATED SENSOR AND A METHOD OF MANUFACTURING A SENSOR" filed on December 12, 2018 and incorporated herein by reference. Priority to U.S. Provisional Patent Application No. 778,445. This application is also related to U.S. Ser. Nos. 9,496,425, 9,818,887 and 10,121,914, all to Chern et al. and all entitled "Back-illuminated sensor with boron layer" patent. These patents and applications are incorporated herein by reference. technical field [0003] The present application relates to image sensors suitable for sensing radiation in deep UV (DUV) and vacuum UV (VUV) wavelengths and methods for making such image sensors. These sensors are suitable for use in photomask, reticle or wafer inspection systems, among other applications. Background technique [0004] The following description and examples are not admitted to be prior art by virtue of their inclusion in thi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146
CPCH01L27/1462H01L27/1464H01L27/14687H01L27/14685H01L27/14806H01L27/14683H01L27/14601
Inventor 勇-霍·亚历克斯·庄振-华·霍华德·陈约翰·费尔登张璟璟戴维·L·布朗西西尔·雅拉曼其里
Owner KLA CORP
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