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Systems and methods for trimming bandgap offsets using bipolar diode elements

A diode and control unit technology, applied in the field of bandgap trimming, can solve the problem of consuming the substantial area of ​​integrated circuits

Active Publication Date: 2016-08-03
MICROCHIP TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this technique consumes substantial area on the integrated circuit and requires additional external pins

Method used

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  • Systems and methods for trimming bandgap offsets using bipolar diode elements
  • Systems and methods for trimming bandgap offsets using bipolar diode elements
  • Systems and methods for trimming bandgap offsets using bipolar diode elements

Examples

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Embodiment Construction

[0020] According to an embodiment, an integrated circuit may include: an untrimmed bandgap generating circuit; and a bandgap generating circuit coupled to the untrimmed bandgap generating circuit, the bandgap generating circuit comprising: a bipolar diode device One or more of, each bipolar diode device coupled in parallel with another bipolar diode device, and wherein the trimmed bandgap output of the integrated circuit is a function of the number of bipolar diode devices.

[0021] According to another embodiment, the one or more bipolar diode devices may comprise bipolar junction transistors. According to another embodiment, the one or more bipolar diode devices may comprise a bipolar junction transistor (BJT) coupled with a metal oxide semiconductor field effect transistor (MOSFET). According to another embodiment, the one or more bipolar diode devices may be coupled in series to one or more resistors.

[0022] According to another embodiment, a system for trimming a bandg...

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Abstract

The present invention discloses an integrated circuit having: an untrimmed bandgap generating circuit; and a bandgap generating circuit coupled to the untrimmed bandgap generating circuit. The bandgap generation circuit has a current source controlled by the untrimmed bandgap generation circuit and coupled in series with a resistor and a first bipolar diode device; one or more of the bipolar diode devices, Each bipolar diode device is coupled in parallel with the first bipolar diode device, wherein the trimmed bandgap reference voltage output of the integrated circuit is a function of the number of bipolar diode devices.

Description

[0001] Related Application Cross Reference [0002] This application claims benefit of U.S. Provisional Application Serial No. 61 / 115,631, filed November 18, 2008, and entitled "SYSTEMS AND METHODS FOR TRIMMING BAND GAPOFFSET WITH BIPOLARDIO DEELEMENTS" , which is incorporated herein by reference in its entirety. technical field [0003] The technical field of this application relates to circuits, and more particularly to trimming bandgap offsets using diode elements. Background technique [0004] In analog circuit design, it can be difficult to obtain accurate voltages or measurements because analog components have many parameters that vary with process, temperature and / or supplied power. Accordingly, one or more reference voltages for an integrated circuit may be generated from a bandgap reference voltage circuit. However, if the bandgap reference voltage is inaccurate due to variations in supplied power or temperature, all reference voltages derived from the bandgap re...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G05F3/30
CPCG05F3/30G05F3/262
Inventor 明·勒伍韦·马丁
Owner MICROCHIP TECH INC