Method and system for controlling automatic growth of zone-melt crystal by adopting diameter process

Abstract

The invention relates to a method and system for controlling automatic growth of zone-melt crystal by adopting a diameter process. The method comprises the steps of: setting a growing interval and inputting control parameters; opening a control program when the diameter is more than 50 mm; judging the growing interval by the program according to the detected single crystal diameter and dispatching and calculating the interval parameters; controlling according to the parameters and the calculated value; running the program in the next interval after finishing growing until entering the isometrical growing step; and controlling according to a preset value of a keeping power. The system for controlling automatic growth of zone-melt crystal by adopting the diameter process comprises a PLC controller, a PC, a camera, a generator, a touch screen, an upper-rotating servo motor, a lower-rotating servo motor, a speed-increasing servo motor and a speed-reducing servo motor, a polycrystal rotating motor and a monocrystal rotating motor, a polycrystal descending motor and a monocrystal descending motor, an electromagnetic valve, a flowmeter and a sensor. According to the method and the systemin the invention, the capacity of a zone-melting process for producing large-diameter monocrystals is improved greatly; the artificial error and loss in the zone-melting process are reduced; the working intensity of growing the monocrystals in the zone-melting process is reduced; and the consistency of the monocrystals can be improved effectively.

Description

technical field [0001] The present invention relates to a method and equipment for producing zone-melted silicon single crystals, in particular to a method and system for controlling the automatic growth of zone-melted crystals using the diameter method. Background technique [0002] At present, the production of silicon single crystal by zone melting method mainly uses the method of artificial crystal pulling. The process of growing crystals by zone melting method is mainly composed of preheating and chemical materials, neck and thin neck growth, shoulder shouldering, equal diameter growth, and finishing. At present, the five process sections of the zone melting method basically adopt artificial methods, and the disadvantages of artificial crystal pulling are obvious: 1) When growing large-diameter single crystals, the artificial pulling time is too long, and it is difficult to mass-produce large-diameter single crystals ; 2) During crystal growth, human influence factors ...

AI Technical Summary

Problems solved by technology

At present, the five process sections of the zone melting method basically adopt artificial methods, and the disadvantages of artificial crystal pulling are obvious: 1) When growing large-diameter single crystals, the artificial pulling time is too long, and it is difficult to mass-produce large-diameter single crystals ; 2) In the process of crystal growth, human influence factors are relatively large, and the growth process of the crystal is difficult to control; 3) The quality of the single crystal is poorly controlled, and artificial crystal pulling cannot guarantee that every zone melting single crystal produced has the same quality

[0003] Since there is no research on the automatic growth technology of zone melting crystals in China, it is very necessary to develop a set of zone melting silicon single crystal automatic growth methods and systems

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