Crystal material grinding mechanism

Abstract

The invention discloses a crystal material grinding mechanism, relating to processing equipment for a crystal material. A clamping mechanism (5) for fixing a crystal bar is arranged on one side of a vertical grinding mechanism for grinding the crystal bar and a transverse grinding mechanism for grinding the crystal bar; the external margin of a grinding wheel (4) of the vertical grinding mechanism for grinding the crystal bar corresponds to an axial center line of the crystal bar (7) so as to form a U-shaped cut structure on the end part face of the crystal bar (7); the external margin of thegrinding wheel (4) of the transverse grinding mechanism for grinding the crystal bar is vertical to the axial center line of the crystal bar (7); and the vertical grinding mechanism for grinding the crystal bar and the transverse grinding mechanism for grinding the crystal bar, as well as a feeding mechanism are externally connected with a control system. According to the crystal material grinding mechanism, accurate grinding is carried out by utilizing the vertical grinding mechanism for grinding the crystal bar and the transverse grinding mechanism for grinding the crystal bar, so that the aim of stably grinding the crystal bar is realized, the degree of mechanization for processing the crystal bar is effectively improved and the defect of being required for drawing a silicone core round spherical body in the prior art is overcome.

Description

【Technical field】 [0001] The invention relates to a crystal material processing equipment, in particular to a crystal material grinding mechanism. 【Background technique】 [0002] In the process of polysilicon production using the Siemens method, silicon core lapping technology is a very important link, which is mainly used in the reduction reaction process of polysilicon production. The principle of the reduction reaction process in this link is: the reduction reaction is carried out in a closed reduction furnace, and several closed loops are formed by overlapping silicon cores in the reduction furnace before loading the furnace, that is, in the jargon "Bridge"; each closed circuit is composed of two vertical silicon cores and one horizontal silicon core; the two vertical silicon cores of each closed circuit are respectively connected to two electrodes on the bottom of the furnace, and the two electrodes are respectively connected The positive and negative poles of the DC p...

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Problems solved by technology

[0003] When the above technology is realized, one horizontal silicon core and two vertical silicon cores are connected through bridging technology. The Chinese patent previously applied by the inventor discloses a porous silicon core that can effectively increase the contact area and reduce the resistance. Core overlapping method, this patent proposes a method of overlapping spherical silicon cores, which is to arrange silicon core spheres at both ends of the horizontal silicon core, and respectively set jacks at the lower parts of the two silicon core spheres , the socket on the upper end of the vertical silicon core is matched with the socket to form a connection method that increases the contact area and reduces the resistance; however, in practical applications, it is found that when drilling holes on the horizontal silicon core sphere, the horizontal silicon core often results in Cracks or even fractures occur on the sphere, and the yield is relatively low, which increases the processing cost; and drawing the sphere at both ends of the horizontal silicon core is also a relatively complicated and costly process. This process is not only complicated, but also Moreover, if you are not careful when drawing a horizontal silicon core sphere, the contact between the high-frequency coil and the silicon core will cause ignition, and even cause the high-frequency coil to be scrapped, and affect the progress of the process. The drawing process must be stopped. The next drawing process is carried out by replacing the high-frequency coil. In order to prevent the raw material rod from being oxidized during the drawing process when the equipment is turned on again during shutdown, it is necessary to replace the new seed crystal and re-silicon The core furnace is vacuumed, flushed with protective gas, heated and other process steps; so it is necessary to improve the overlapping method of the silicon core and its equipment

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