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Self aligned fin-type programmable memory cell

A storage unit and storage material technology, applied in electrical components, semiconductor devices, circuits, etc., can solve the problems of very narrow injection of phase change materials, limiting the energy saving performance of storage units, etc., to achieve size reduction, reduce reset current, and improve height Effect

Active Publication Date: 2011-11-16
MACRONIX INT CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The difficulty with this process is that the phase change material needs to be injected into very narrow gaps
In addition, the finished fin phase change material has only a limited height, which limits the energy saving performance of this memory cell

Method used

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  • Self aligned fin-type programmable memory cell
  • Self aligned fin-type programmable memory cell
  • Self aligned fin-type programmable memory cell

Examples

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Embodiment Construction

[0095] The following description of the invention will generally refer to specific structural examples and methods. It will be understood that the invention is not limited to its detailed description, particularly with respect to the disclosed embodiments and methods, and the invention can also be practiced using other features, elements, methods, and embodiments. The preferred embodiments described in the present invention are not intended to limit its scope, but are defined in the scope of the claims. Those skilled in the art can also understand various equivalent changes in the embodiments of the present invention. For simplicity of description, the same components used in various embodiments may not be labeled again in other figures. Additionally, certain features are not shown in every figure, also for simplicity of illustration, but which do not obscure the understanding of the present invention.

[0096] Figure 1A and Figure 1B A schematic diagram of a typical unit...

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PUM

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Abstract

The invention discloses a self aligned fin-type programmable memory cell. The memory cell includes a bottom electrode electrically coupled to an access device, a top electrode, and an L-shaped memory material element electrically coupled to the bottom and top electrodes. A memory array includes an array of such memory cells, electrically coupled to an array of access devices. An other object of the invention is to provide a method for making a memory array employing the memory cell.

Description

technical field [0001] The present invention relates to high density memory devices based on phase change memory materials, such as chalcogenide materials and other programmable resistive memory materials, and methods of manufacturing such devices. Background technique [0002] Phase change based memory materials such as chalcogenides or other similar materials can be induced to change phase between an amorphous state and a crystalline state by applying a current stage suitable for use in integrated circuits. The substantially amorphous state has a higher resistivity than the substantially crystalline state, which can be easily sensed for indicating data. These properties have sparked interest in using programmable resistive materials as nonvolatile memory circuits that can be read or written with random access. [0003] The phase change from an amorphous state to a crystalline state is generally a lower current operation. The phase change from a crystalline state to an am...

Claims

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Application Information

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IPC IPC(8): H01L45/00H01L27/24
CPCH01L45/144H01L45/1666H01L27/2454H01L45/06H01L45/142H01L45/147H01L27/2445H01L27/2472H01L45/146H01L45/085H10B63/20H10B63/34H10N70/20H10N70/231H10N70/245H10N70/8265H10N70/8822H10N70/8828H10N70/8833H10N70/8836H10N70/068H10B63/82H10N70/061
Inventor 龙翔澜马修·J·布雷杜斯克林仲汉
Owner MACRONIX INT CO LTD