Semiconductor light emitting diode and manufacturing method thereof

Abstract

The invention discloses a semiconductor light emitting diode and a manufacturing method thereof. The method includes: forming a crystalline nitride semiconductor layer on a substrate; forming an amorphous layer and a crystalline nitride semiconductor layer on the nitride semiconductor layer; forming an n-type nitride semiconductor layer on the crystalline nitride semiconductor layer; forming an active layer on the compound semiconductor layer; and forming a p-type nitride semiconductor layer on the active layer.

Description

technical field [0001] The present invention relates to light emitting diodes, and more particularly to semiconductor light emitting diodes (LEDs) with improved epitaxial layers and methods of making the same. Background technique [0002] In general, a light emitting diode (LED) is a semiconductor device that converts received electrical energy into infrared light, ultraviolet light, and visible light using properties of compound semiconductors, such as recombination between electrons and holes. [0003] Such LEDs are generally used in home appliances, remote controllers, electronic display boards, display devices, various automatic devices, optical communications, and are mainly classified into infrared light emitting diodes (IREDs) and visible light emitting diodes (VLEDs). [0004] The frequency (or wavelength) of light emitted by an LED is a function of the bandgap of the material used in the semiconductor device. In the case of the use of narrow bandgap semiconductor ...

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Problems solved by technology

[0024] Second, when the n-type GaN layer is grown to form the GaN epitaxial layer of the LED, the wafer may experience concave curvature

In this case, the emission uniformity of the active layer will be reduced, and the wavelength yield will be reduced

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